UTC PZT2222A
NPN EPITAXIAL SILICON TRANSISTOR
NPN GENERAL PURPOSE
AMPLIFIER
FEATURES
*This device is for use as a medium power amplifier and
switch requiring collector currents up to 500mA. Sourced
from Process 19.
1
2
3
4
SOT-223
1:EMITTER
2,4:COLLECTOR
3:BASE
ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATING
UNIT
Collector-base voltage
VCBO
75
V
Collector-emitter voltage
VCEO
40
V
Emitter-base voltage
VEBO
6
V
Collector current
Ic
1
A
Junction Temperature
Tj
150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: These are steady state limits. The factory should be consulted on applications involving pulsed or low duty
cycle operations.
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
OFF CHARACTERISTICS
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Collector cutoff current
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICEX
ICBO
75
40
6
Emitter cutoff current
Base cutoff current
IEBO
IBL
Ic=10µA, IE=0
Ic=10mA, IB=0
IE=10µA, Ic=0
VCE=60V,VEB(OFF)=3.0V
VCB=60V,IE=0
VCB=60V,IE=0, TA=150°C
VEB=3.0V,IC=0
VCE=60V, VEB(OFF)=3.0V
UTC
TYP
MAX
UNIT
10
0.01
10
10
20
V
V
V
nA
µA
µA
nA
nA
UNISONIC TECHNOLOGIES CO., LTD.
1
QW-R207-001,A
