FEDD56V82160-01
OKI Semiconductor
MD56V82160
Issue Date:Feb.14, 2008
4-Bank 4,194,304-Word 16-Bit SYNCHRONOUS DYNAMIC RAM
DESCRIPTION
The MD56V82160 is a 4-Bank 4,194,304-word 16-bit Synchronous dynamic RAM.
The device operates at 3.3 V. The inputs and outputs are LVTTL compatible.
FEATURES
• Silicon gate, quadruple polysilicon CMOS, 1-transistor memory cell
• 4-Bank 4,194,304-word 16-bit configuration
• Single 3.3 V power supply, 0.3 V tolerance
• Input : LVTTL compatible
• Output : LVTTL compatible
• Refresh : 8192 cycles/64 ms
• Programmable data transfer mode
- CAS Latency (2, 3)
- Burst Length (1, 2, 4, 8, Full Page)
- Data scramble (sequential, interleave)
• Auto-refresh, Self-refresh capability
• Lead-Free Package:
54-pin 400 mil plastic TSOP (TypeII) (TSOP(2)54-P-400-0.80-K) (Product: MD56V82160-xxTAZ03)
xx indicates speed rank.
PRODUCT FAMILY
Family
MD56V82160-6
CL-tRP-tRCD
Max.
Frequency
Access Time (Max.)
tAC2
tAC3
3-3-3
166 MHz
−
5.4 ns
2-3-3
133 MHz
5.4 ns
−
1/1
