EMG5 / UMG5N
NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors)
Datasheet
lOutline
Parameter
Tr1 and Tr2
VCC
50V
100mA
10kW
47kW
IC(MAX.)
R1
R2
EMT5
UMT5
(5)
(1)
(4)
(2)
(3)
(2)
(1)
(4)
(5)
EMG5
(SC-107BB)
lFeatures
(3)
UMG5N
SOT-353 (SC-88A)
lInner circuit
1) Built-In Biasing Resistors.
2) Two DTC114Y chips in one package.
3) Emitter(GND)-common type.
4) Built-in bias resistors enable the configuration of
an inverter circuit without connecting external
input resistors (see inner circuit).
5) The bias resistors consist of thin-film resistors
with complete isolation to allow negative biasing
of the input. They also have the advantage of
completely eliminating parasitic effects.
6) Only the on/off conditions need to be set for
operation, making the circuit design easy.
7) Lead Free/RoHS Compliant.
IN
(3)
GND
(2)
(4)
OUT
IN
(1)
(5)
OUT
lApplication
Inverter circuit, Interface circuit, Driver circuit
lPackaging specifications
Package
Package
size
(mm)
Taping
code
EMG5
EMT5
1616
T2R
180
8
8,000
G5
UMG5N
UMT5
2021
TR
180
8
3,000
G5
Part No.
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© 2012 ROHM Co., Ltd. All rights reserved.
1/6
Basic
Reel size Tape width
ordering
(mm)
(mm)
unit (pcs)
Marking
2012.06 - Rev.B
Data Sheet
EMG5 / UMG5N
lElectrical characteristic curves(Ta = 25°C)
Fig.2 Output current vs. input voltage
(OFF characteristics)
INPUT VOLTAGE : VI(on) [V]
OUTPUT CURRENT : IO [A]
Fig.1 Input voltage vs. output current
(ON characteristics)
OUTPUT CURRENT : IO [A]
INPUT VOLTAGE : VI(off)[V]
Fig.4 DC current gain vs. output current
Fig.3 Output current vs. output voltage
II=
350μA
Ta=25ºC
OUTPUT CURRENT : IO [mA]
60
300μA
50
250μA
40
200μA
30
150μA
20
100μA
10
50μA
0
DC CURRENT GAIN : GI
70
0A
0
5
10
OUTPUT CURRENT : IO [A]
OUTPUT VOLTAGE : VO [V]
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© 2012 ROHM Co., Ltd. All rights reserved.
3/6
2012.06 - Rev.B
