CRS04
TOSHIBA Schottky Barrier Rectifier Schottky Barrier Type
CRS04
Switching Mode Power Supply Applications
Portable Equipment Battery Applications
Unit: mm
•
Forward voltage: VFM = 0.49 V (max)
•
Average forward current: IF (AV) = 1.0 A
•
Repetitive peak reverse voltage: VRRM = 40 V
•
Suitable for compact assembly due to small surface-mount package
“S−FLATTM” (Toshiba package name)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Repetitive peak reverse voltage
VRRM
40
V
Average forward current
IF (AV)
Peak one cycle surge forward current
(non-repetitive)
1.0 (Note 1)
A
IFSM
20 (50 Hz)
A
Junction temperature
Tj
−40~150
°C
Storage temperature
Tstg
−40~150
°C
Note 1: Ta = 31°C
Device mounted on a glass-epoxy board
(board size: 50 mm × 50 mm, land size: 6 mm × 6 mm)
JEDEC
―
JEITA
―
TOSHIBA
3-2A1A
Weight: 0.013 g (typ.)
Note 2: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
VFM (1)
Junction capacitance
Thermal resistance (junction to ambient)
Thermal resistance (junction to lead)
⎯
0.395
⎯
VFM (2)
IFM = 0.7 A
⎯
0.475
0.49
IFM = 1.0 A
⎯
0.51
⎯
IRRM (1)
VRRM = 5 V
⎯
0.6
⎯
IRRM (2)
VRRM = 40 V
⎯
⎯
100
VR = 10 V, f = 1.0 MHz
⎯
47
⎯
Device mounted on a ceramic board
(soldering land: 2 mm × 2 mm)
Repetitive peak reverse current
IFM = 0.1 A
VFM (3)
Peak forward voltage
⎯
⎯
Unit
70
Cj
Rth (j-a)
Device mounted on a glass-epoxy
board
(soldering land: 6 mm × 6 mm)
⎯
Rth (j-ℓ)
1
V
μA
pF
°C/W
⎯
⎯
140
⎯
⎯
20
°C/W
2006-11-13
CRS04
iF – vF
PF (AV) – IF (AV)
10
Average forward power dissipation
PF (AV) (W)
Instantaneous forward current
iF (A)
0.8
Tj = 150°C
1
125°C
75°C
0.1
25°C
0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
Instantaneous forward voltage VF
0.6
Rectangular
waveform
0.2
0° α 360°
0.1
Conduction angle α
0.2
0.4
0.6
0.8
Maximum allowable lead ltemperature
Ta max (°C)
140
120
100
α = 60°
120°
180°
DC
60
0° α 360°
IF (AV)
20 Conduction
angle α
VR = 15 V
0
0.0
0.2
0.4
0.6
0.8
1.0
Average forward current
1.2
IF (AV)
1.4
1.2
IF (AV)
1.4
1.6
(A)
Ta max – IF (AV)
Glass-epoxy substrate (substrate size:
50 mm × 50 mm, soldering land: 6 mm × 6 mm)
160
Rectangular
waveform
1.0
Average forward current
Ceramic substrate (substrate size: 50 mm × 50 mm)
Maximum allowable ltemperature
Ta max (°C)
α = 60°
0.3
(V)
160
40
120°
0.4
Ta max – IF (AV)
80
180°
0.5
0
0.0
1.4
DC
0.7
140
(A)
IF (AV)
0° α 360°
120
VR = 20 V
Conduction angle α
100
80
60
40
20
0
0.0
1.6
Rectangular waveform
α = 60°
0.2
0.4
120°
0.6
0.8
Average forward current
180°
1.0
1.2
IF (AV)
DC
1.4
1.6
(A)
rth (j-a) – t
Transient thermal impedance
rth (j-a) (°C/W)
1000
100
②
①
10
1
① Device mounted on a ceramic board:
Soldering land: 2 mm × 2 mm
② Device mounted on a glass-epoxy board:
Soldering land: 6 mm × 6 mm
0.1
1
10
100
1000
time t
10000
100000
(ms)
3
2006-11-13