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部品型式

CRS04TE85L

製品説明
仕様・特性

CRS04 TOSHIBA Schottky Barrier Rectifier Schottky Barrier Type CRS04 Switching Mode Power Supply Applications Portable Equipment Battery Applications Unit: mm • Forward voltage: VFM = 0.49 V (max) • Average forward current: IF (AV) = 1.0 A • Repetitive peak reverse voltage: VRRM = 40 V • Suitable for compact assembly due to small surface-mount package “S−FLATTM” (Toshiba package name) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Repetitive peak reverse voltage VRRM 40 V Average forward current IF (AV) Peak one cycle surge forward current (non-repetitive) 1.0 (Note 1) A IFSM 20 (50 Hz) A Junction temperature Tj −40~150 °C Storage temperature Tstg −40~150 °C Note 1: Ta = 31°C Device mounted on a glass-epoxy board (board size: 50 mm × 50 mm, land size: 6 mm × 6 mm) JEDEC ― JEITA ― TOSHIBA 3-2A1A Weight: 0.013 g (typ.) Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max VFM (1) Junction capacitance Thermal resistance (junction to ambient) Thermal resistance (junction to lead) ⎯ 0.395 ⎯ VFM (2) IFM = 0.7 A ⎯ 0.475 0.49 IFM = 1.0 A ⎯ 0.51 ⎯ IRRM (1) VRRM = 5 V ⎯ 0.6 ⎯ IRRM (2) VRRM = 40 V ⎯ ⎯ 100 VR = 10 V, f = 1.0 MHz ⎯ 47 ⎯ Device mounted on a ceramic board (soldering land: 2 mm × 2 mm) Repetitive peak reverse current IFM = 0.1 A VFM (3) Peak forward voltage ⎯ ⎯ Unit 70 Cj Rth (j-a) Device mounted on a glass-epoxy board (soldering land: 6 mm × 6 mm) ⎯ Rth (j-ℓ) 1 V μA pF °C/W ⎯ ⎯ 140 ⎯ ⎯ 20 °C/W 2006-11-13 CRS04 iF – vF PF (AV) – IF (AV) 10 Average forward power dissipation PF (AV) (W) Instantaneous forward current iF (A) 0.8 Tj = 150°C 1 125°C 75°C 0.1 25°C 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 Instantaneous forward voltage VF 0.6 Rectangular waveform 0.2 0° α 360° 0.1 Conduction angle α 0.2 0.4 0.6 0.8 Maximum allowable lead ltemperature Ta max (°C) 140 120 100 α = 60° 120° 180° DC 60 0° α 360° IF (AV) 20 Conduction angle α VR = 15 V 0 0.0 0.2 0.4 0.6 0.8 1.0 Average forward current 1.2 IF (AV) 1.4 1.2 IF (AV) 1.4 1.6 (A) Ta max – IF (AV) Glass-epoxy substrate (substrate size: 50 mm × 50 mm, soldering land: 6 mm × 6 mm) 160 Rectangular waveform 1.0 Average forward current Ceramic substrate (substrate size: 50 mm × 50 mm) Maximum allowable ltemperature Ta max (°C) α = 60° 0.3 (V) 160 40 120° 0.4 Ta max – IF (AV) 80 180° 0.5 0 0.0 1.4 DC 0.7 140 (A) IF (AV) 0° α 360° 120 VR = 20 V Conduction angle α 100 80 60 40 20 0 0.0 1.6 Rectangular waveform α = 60° 0.2 0.4 120° 0.6 0.8 Average forward current 180° 1.0 1.2 IF (AV) DC 1.4 1.6 (A) rth (j-a) – t Transient thermal impedance rth (j-a) (°C/W) 1000 100 ② ① 10 1 ① Device mounted on a ceramic board: Soldering land: 2 mm × 2 mm ② Device mounted on a glass-epoxy board: Soldering land: 6 mm × 6 mm 0.1 1 10 100 1000 time t 10000 100000 (ms) 3 2006-11-13

ブランド

TOSHIBA

会社名

株式会社 東芝セミコンダクター&ストレージ社

本社国名

日本

事業概要

半導体部門、DRAM、フラッシュメモリ、プロセッサ、汎用LSI

供給状況

 
Not pic File
データシート
pdf
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型式 数量 D/C・lead 備考 選択
CRS04(TE85L) 2969個 N/A LEADED

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