IMT17
Transistors
General purpose transistor
(isolated dual transistors)
IMT17
External dimensions (Unit : mm)
2.9±0.2
1.1+0.2
−0.1
1.9±0.2
0.8±0.1
0.95 0.95
(5)
(4)
(6)
+0.2
1.6
−0.1
(4)
2.8±0.2
Features
1) Two 2SA1036K chips in an SMT package.
2) Same size as SMT3 package, so same mounting
machine can be used for both.
3) Transistor elements are independent, eliminating
interference.
4) High collector current. IC = −500mA
5) Mounting cost, and area, are reduced by one half.
(2) (1)
+0.1
0.3−0.05
(3)
+0.1
0.15−0.06
All terminals have same dimensions
ROHM : SMT6
EIAJ : SC-74
Structure
Epitaxial planar type
PNP silicon transistor
(5)
(6)
0 to 0.1
Tr1
Tr2
0.3 to 0.6
Applications
General purpose small signal amplifier
(3)
(2)
(1)
Abbreviated symbol: T17
Packaging specifications
Packaging type
Taping
Code
Part No.
The following characteristics apply to both Tr1 and Tr2.
T110
Basic ordering unit (pieces)
3000
IMT17
Absolute maximum ratings (Ta=25°C)
Parameter
Limits
Symbol
Unit
Collector-base voltage
VCBO
−60
Collector-emitter voltage
VCEO
−50
V
Emitter-base voltage
VEBO
−5
V
V
Collector current
IC
−500
mA
Power dissipation
Pd
300(TOTAL)
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
∗
∗ 200mW per element must not be exceeded.
Electrical characteristics(Ta=25°C)
Parameter
Symbol
Typ.
Max.
Unit
Collector-base breakdown voltage
BVCBO
−60
−
−
V
IC= −100µA
Collector-emitter breakdown voltage
BVCEO
−50
−
−
V
IC= −1mA
Emitter-base breakdown voltage
BVEBO
−5
−
−
V
IE= −100µA
V= −30V
Min.
Conditions
Collector cutoff current
ICBO
−
−
−0.1
µA
Emitter cutoff current
IEBO
−
−
−0.1
µA
V= −4V
VCE(sat)
−
−
−0.6
V
IC/IB= −500mA/ −50mA
hFE
120
−
390
−
VCE= −3V, IC= −100mA
fT
−
200
−
MHz
Cob
−
7
−
pF
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
∗
VCE= −5V, IE= 20mA, f= 100MHz
VCB= −10V, IE= 0A, f= 1MHz
∗ Measured using pulse current.
Rev.A
1/2
