2SD1767 / 2SD1859
Transistors
Medium power transistor (80V, 0.7A)
2SD1767 / 2SD1859
External dimensions (Unit : mm)
Features
1) High breakdown voltage, BVCEO=80V, and
high current, IC=0.7A.
2) Complements the 2SB1189 / 2SB1238.
2SD1767
4.0
1.5
0.4
1.0
Unit
V
V
V
A(DC)
5
VEBO
IC
Collector current
0.7
1
0.5
ICP
2SD1767
Collector power
dissipation
PC
A(Pulse)
Tj
Tstg
Junction temperature
Storage temperature
−55 to +150
1.6
∗3
°C
2SD1859
°C
∗1 Pw=10ms, duty=1/2
∗2 When mounted on a 40×40×0.7 mm ceramic board.
∗3 Printed circuit board 1.7 mm thick, collector plating 1cm2 or larger.
2.5
6.8
0.9
Type
2SD1767
MPT3
PQR
∗Denotes h
DC∗
T100
1000
14.5
1.0
0.65Max.
Packaging specifications and hFE
Package
hFE
Marking
Code
Basic ordering unit (pieces)
4.5
0.5
(1) Base
(2) Collector
(3) Emitter
W
∗2
2
1
150
2SD1859
ROHM : MPT3
EIAJ : SC-62
∗1
4.4
Emitter-base voltage
1.5
80
80
0.4
VCBO
1.5
0.4
Limits
VCEO
(1)
(3)
Symbol
Parameter
Collector-base voltage
Collector-emitter voltage
0.5
(2)
3.0
Absolute maximum ratings (Ta=25°C)
2.5
0.5
2SD1859
ATV
QR
−
TV2
2500
(1) (2) (3)
2.54 2.54
1.05
0.45
Taping specifications
ROHM : ATV
FE
(1) Emitter
(2) Collector
(3) Base
Electrical characteristics (Ta=25°C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Collector-base breakdown voltage
Collector-emitter breakdown voltage
BVCBO
80
−
−
V
IC=50µA
BVCEO
80
−
−
V
IC=2mA
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
BVEBO
5
−
−
V
IE=50µA
ICBO
−
−
0.5
µA
VCB=50V
IEBO
−
−
0.5
µA
VEB=4V
Collector-emitter saturation voltage
VCE(sat)
−
0.2
0.4
V
IC/IB=500mA/50mA
Transition frequency
hFE
fT
120
−
−
120
390
−
−
MHz
Output capacitance
Cob
−
10
−
pF
DC current transfer ratio
Conditions
VCE/IC=3V/0.1A
VCE=10V, IE=−50mA, f=100MHz
VCB=10V, IE=0A, f=1MHz
Rev.A
1/2
