1SS193
TOSHIBA Diode Silicon Epitaxial Planar Type
1SS193
Unit: mm
Ultra High Speed Switching Application
Small package
: SC-59
Low forward voltage
: VF (3) = 0.9V (typ.)
Fast reverse recovery time : trr = 1.6ns (typ.)
Small total capacitance
: CT = 0.9pF (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
VRM
85
V
Reverse voltage
VR
80
V
Maximum (peak) forward current
IFM
300
mA
Average forward current
IO
100
mA
IFSM
2
A
Power dissipation
P
150
mW
Junction temperature
Tj
125
°C
Tstg
−55 to 125
°C
Maximum (peak) reverse voltage
Surge current (10ms)
Storage temperature range
JEDEC
JEITA
SC-59
1-3G1B
TOSHIBA
Weight: 0.012g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
VF (1)
Reverse current
―
0.60
―
VF (2)
IF = 10mA
―
0.72
―
VF (3)
Forward voltage
IF =1mA
IF = 100mA
―
0.90
1.20
IR (1)
VR = 30V
―
―
0.1
IR (2)
VR = 80V
―
―
0.5
Unit
V
μA
Total capacitance
CT
VR = 0, f = 1MHz
―
0.9
3.0
pF
Reverse recovery time
trr
IF = 10mA (Fig.1)
―
1.6
4.0
ns
Marking
Start of commercial production
1982-05
1
2014-08-25
