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2SB1132T100R
Medium Power Transistor (32V,1A) 2SB1132 / 2SA1515S / 2SB1237 2SB1132 2SA1515S 4 + 0.2 − 1.5 +0.2 −0.1 (1) 0.4 + 0.1 − 1.5 + 0.1 − (2) (3) 0.4 +0.1 −0.05 0.5 + 0.1 − 0.4 0.1 1.5 + 0.1 − 3.0 + 0.2 − 5 Abbreviated symbol: BA (2) 14.5 + 0.5 − (3) 2.54 2.54 1.05 ROHM : ATV ∗ Denotes h 1/4 (1) Emitter (2) Collector (3) Base 4.4 + 0.2 − 0.9 0.5 + 0.1 − www.rohm.com 0.45 +0.15 −0.05 1.0 0.65Max. c ○ 2009 ROHM Co., Ltd. All rights reserved. 0.5 2.5 + 0.2 − 6.8 + 0.2 − (1) 2.5 +0.4 −0.1 ROHM : SPT EIAJ : SC-72 ∗ 2SB1237 0.45 +0.15 −0.05 (1) (2) (3) (1) Base (2) Collector (3) Emitter ROHM : MPT3 EIAJ : SC-62 2 + 0.2 − 3Min. 4.0 + 0.3 − 2.5 +0.2 −0.1 1.6 + 0.1 − 3 + 0.2 − 0.5 + 0.1 − 4.5 +0.2 −0.1 (15Min.) Structure Epitaxial planar type PNP silicon transistor Dimensions (Unit : mm) 1.0 + 0.2 − Features 1) Low VCE(sat). VCE(sat) = 0.2V(Typ.) (IC / IB = 500mA / 50mA) 2) Compliments 2SD1664 / 2SD1858 0.45 + 0.1 − (1) Emitter (2) Collector (3) Base FE 2009.12 - Rev.C 2SB1132 / 2SA1515S / 2SB1237 Data Sheet Electrical characteristics curves -200 -100 -50 Ta=100 C 25 C −55 C -20 -10 -5 −500 −3.0 −3.5 −4.0 −400 −4.5 −5.0 Ta=25 C Ta=25 C −2.5 1000 −2.0 DC CURRENT GAIN : hFE VCE= −6V COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) -500 −1.5 −300 −1.0 −200 −0.5 −100 -2 -1 0 0 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 −0.4 −0.8 −1.2 500 VCE= −3V −1V 200 100 50 IB=0mA −1.6 −2.0 −1 −2 −5 −10 −20 −50 −100 −200 −500 −1000 Fig.1 Grounded emitter propagation characteristics Fig.2 Grounded emitter output characteristics Fig.3 DC current gain vs. collector current(Ι) VCE= −3V DC CURRENT GAIN : hFE 1000 500 Ta=100 C 25 C 200 −55 C 100 50 −1 −2 −5 −10 −20 −50 −100 −200 −500−1000 −1 −0.5 COLLECTOR TO EMITTER VOLTAGE : VCE (V) COLLECTOR CURRENT : IC (mA) COLLECTOR SATURATION VOLTAGE : VCE(sat )(V) BASE TO EMITTER VOLTAGE : VBE (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) Ta=25 C IC/IB=10 −0.2 −0.1 −0.05 −0.02 −0.01 −1 −2 −5 −10 −20 −50 −100 −200 −500 −1000 −2000 −1.0 Ta=25 C −0.8 −0.6 lC= −500mA −0.4 −0.2 lC= −300mA 0 −1 −2 −5 −10 −20 −50 −100 BASE CURRENT : IB (mA) Fig.5 Collector-emitter saturation voltage vs. collector current Fig.6 Collector-emitter saturation voltage vs. base current 20 −1 −2 −5 −10 −20 −50 −100 EMITTER CURRENT : IE (mA) Fig.7 Gain bandwidth product vs. emitter current www.rohm.com c ○ 2009 ROHM Co., Ltd. All rights reserved. 20 10 −0.5 −1 −2 −5 −10 −20 COLLECTOR TO BASE VOLTAGE : VCB (V) Fig.8 Collector output capacitance vs.collector-base voltage 3/4 −1 −0.5 ∗ 50 50 −2 s 0m =1 ∗ P w ms 00 100 Ta=25 C f=1MHz IE=0A =1 Pw 200 −5 100 COLLECTOR CURRENT : IC (A) Ta=25 C VCE= −5V COLLECTOR OUTPUT CAPACITANCE : Cob (pF) COLLECTOR CURRENT : IC (mA) Fig.4 DC current gain vs. collector current(ΙΙ) TRANSITION FREQUENCY : fT (MHz) COLLECTOR CURRENT : IC (mA) D −0.2 C −0.1 −0.05 −0.02 Ta=25 C ∗Single pulse −0.01 0 −0.2 −0.5 −1 −2 −5 −10 −20 −50 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.9 Safe operation area (2SB1132) 2009.12 - Rev.C
ROHM
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日本
炭素皮膜抵抗の特許を元に創業した。社名のROHM（R:抵抗 Ohm:抵抗を示す単位）はそこに由来する。その後、大規模集積回路の製造を手がけ始め、現在は様々な機能を顧客の要望に応じてLSI上に集積するカスタムLSIが主力となっている。
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