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FJ3303010L
Doc No. TT4-EA-12653 Revision. 3 Product Standards MOS FET FJ3303010L FJ3303010L Silicon P-channel MOSFET Unit : mm For switching FJ350301 in SSSMini3 type package 1.2 0.3 0.13 3 Features 0.8 1.2 Low drive voltage : 2.5 V drive Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL:Level 1 compliant) 1 Marking Symbol : U1 2 0.2 Packaging Embossed type (Thermo-compression sealing) : 10 000 pcs / reel (standard) 0.52 (0.4) (0.4) 0.8 1. Gate 2. Source 3. Drain Absolute Maximum Ratings Ta = 25C Parameter Symbol Drain-source voltage Gate-source voltage Drain current Pulse drain current Total power dissipation Channel temperature Operating ambient temperature Storage temperature VDS VGS ID IDp PD Tch Topr Tstg Rating Unit -30 12 -100 -200 100 150 -40 to +85 -55 to +150 V V mA mA mW Panasonic JEITA Code SSSMini3-F2-B SC-105AA SOT-723 Internal Connection (D) 3 C 1 (G) 2 (S) Pin Name 1. Gate 2. Source 3. Drain Page 1 of 5 Established : 2010-06-25 Revised : 2013-10-10 Doc No. TT4-EA-12653 Revision. 3 Product Standards MOS FET FJ3303010L ID - VDS ID - VGS -0.1 -1.0E-01 Drain current ID (A) VGS = -1.5 V -2.0 V Ta = 85 ℃ -1.0E-02 Drain current ID (A) -0.08 -0.06 -2.5 V -0.04 -0.02 -1.0E-03 25 ℃ -1.0E-04 -1.0E-05 -40 ℃ -1.0E-06 -4.0 V 0 -1.0E-07 0 -0.2 -0.4 -0.6 -0.8 -1 -0 Drain-source Voltage VDS (V) -3 RDS(on) - ID VDS - VGS 100 Drain source On-state Resistance RDS(on) () Drain-source Voltage VDS (V) -2 Gate-source voltage VGS (V) -1 -20 mA -0.5 -5 mA -10 mA 0 -1 -2 -3 -4 -5 -2.5 V 10 VGS = -4.0 V 1 -0.001 0 -6 Gate-source Voltage VGS (V) -0.1 Dynamic Input/Output Characteristics 100 Gate to source Voltage VGS (V) -3 Ciss 10 Coss Crss 1 -0.1 -0.01 Drain current ID (A) Capacitance - VDS Capacitance C (pF) -1 -2.5 -2 VDD = -3 V -1.5 -1 -0.5 0 -1 -10 Drain-source Voltage VDS (V) -100 0 1 Total Gate Charge Qg (nC) Page 3 of 5 Established : 2010-06-25 Revised : 2013-10-10
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