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US6M2 Transistors 2.5V Drive Nch+Pch MOSFET US6M2 Structure Silicon N-channel MOSFET / Silicon P-channel MOSFET Dimensions (Unit : mm) 0.2Max. TUMT6 Features 1) Nch MOSFET and Pch MOSFET are put in TUMT6 package. 2) High-speed switching, low On-resistance. 3) Low voltage drive (2.5V drive). 4) Built-in G-S Protection Diode. Abbreviated symbol : M02 Applications Switching Packaging specifications Package (6) Taping (5) (4) TR Code Type Inner circuit Basic ordering unit (pieces) ∗1 3000 US6M2 ∗2 ∗2 ∗1 (1) (2) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE (3) (1) Tr1 (Nch) Source (2) Tr1 (Nch) Gate (3) Tr2 (Pch) Drain (4) Tr2 (Pch) Source (5) Tr2 (Pch) Gate (6) Tr1 (Nch) Drain Absolute maximum ratings (Ta=25°C) Parameter Symbol Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Continuous Pulsed Continuous Pulsed Total power dissipation Channel temperature Storage temperature VDSS VGSS ID IDP ∗1 IS ISP ∗1 PD ∗2 Limits Unit Tr1 : Nchannel Tr2 : Pchannel 30 V −20 12 −12 V ±1.5 ±1 A ±6 ±4 A 0.6 −0.4 A 6 −4 A 1.0 W / TOTAL Tch Tstg 0.7 150 −55 to +150 W / ELEMENT °C °C ∗1 Pw≤10µs, Duty cycle≤1% ∗2 Mounted on a ceramic board. Thermal resistance Parameter Channel to ambient Symbol Rth(ch-a) ∗ Limits 125 179 Unit °C/W / TOTAL °C/W / ELEMENT ∗ Mounted on a ceramic board Rev.A 1/3
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