TC7WGU04FU/FK
TOSHIBA CMOS Digital Integrated Circuit
Silicon Monolithic
TC7WGU04FU, TC7WGU04FK
Triple Inverter (Un-Buffer)
Features
TC7WG04FU
•
High output current:
±8 mA (min)
at VCC = 3 V
•
High-speed operation:
tpd = 1.9 ns (typ.)
at VCC = 3.3 V, 15pF
•
Operating voltage range:
VCC = 0.9 to 3.6 V
•
3.6-V tolerant inputs
TC7WG04FK
Marking
SM8
G U04
Product name
Lot. No
US8
WG
U04
Weight
SSOP8-P-0.65 : 0.02 g (typ.)
SSOP8-P-0.50A : 0.01 g (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Pin Assignment (top view)
Symbol
Rating
Unit
Supply voltage
VCC
−0.5 to 4.6
V
DC input voltage
VIN
−0.5 to 4.6
V
−0.5 to VCC + 0.5
DC output voltage
VOUT
Input diode current
IIK
−20
mA
Output diode current
IOK
±20 (Note 1)
mA
DC output current
IOUT
±25
mA
DC VCC / ground current
ICC
±50
Power dissipation
PD
300 (SM8)200 (US8)
Tstg
−65 to150
8 VCC
3Y 2
7 1Y
2A 3
6 3A
GND 4
5 2Y
mW
Storage temperature
1A 1
mA
°C
Note:
V
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Start of commercial production
Note 1: VOUT < GND, VOUT > VCC
2006-04
1
2014-03-01
TC7WGU04FU/FK
Electrical Characteristics
DC Electrical Characteristics
Characteristics
Symbol
Test Condition
Ta = 25°C
Ta = −40 to85°C
Max
Min
Max
VCC
⎯
⎯
VCC
VCC
× 0.8
⎯
⎯
VCC
× 0.8
⎯
VCC
× 0.8
⎯
⎯
VCC
× 0.8
⎯
1.65 to 1.95
VCC
× 0.8
⎯
⎯
VCC
× 0.8
⎯
2.3 to 2.7
VCC
× 0.8
⎯
⎯
VCC
× 0.8
⎯
3.0 to 3.6
VCC
× 0.8
⎯
⎯
VCC
× 0.8
⎯
0.9
⎯
⎯
GND
⎯
GND
⎯
Unit
⎯
1.4 to 1.6
⎯
Typ.
1.1 to 1.3
VIH
Min
0.9
High-level input
voltage
VCC (V)
VCC
× 0.2
V
1.1 to 1.3
⎯
⎯
VCC
× 0.2
⎯
VCC
× 0.2
⎯
⎯
VCC
× 0.2
VCC
× 0.2
⎯
⎯
VCC
× 0.2
VCC
× 0.2
IOH =−0.02 mA
0.9
0.75
⎯
⎯
0.75
⎯
1.1 to 1.3
VCC
× 0.75
⎯
⎯
VCC
× 0.75
⎯
IOH = −1.7 mA
1.4 to 1.6
VCC
× 0.75
⎯
⎯
VCC
× 0.75
⎯
IOH = −3.0 mA
1.65 to 1.95
VCC
-0.45
⎯
⎯
VCC
-0.45
⎯
2.3 to 2.7
2.0
⎯
⎯
2.0
⎯
3.0 to 3.6
2.48
⎯
⎯
2.48
⎯
IOL = 0.02 mA
0.9
⎯
⎯
0.1
⎯
0.1
IOL = 0.3 mA
1.1 to 1.3
⎯
⎯
VCC
× 0.25
⎯
VCC
× 0.25
IOL = 1.7 mA
1.4 to 1.6
⎯
⎯
VCC
× 0.25
⎯
VCC
× 0.25
IOL = 3.0 mA
1.65 to 1.95
⎯
⎯
0.45
⎯
0.45
IOL = 4.0 mA
2.3 to 2.7
⎯
⎯
0.4
⎯
0.4
IOL = 8.0 mA
VIN=GND
VIN = VIH
output voltage
1.65 to 1.95
IOH = −8.0 mA
VOL
VCC
× 0.2
IOH = −4.0 mA
Low-level
⎯
IOH = −0.3 mA
VIN = VIL
output voltage
VCC
× 0.2
3.0 to 3.6
⎯
⎯
0.4
⎯
0.4
0 to 3.6
⎯
⎯
±0.1
⎯
±1.0
μA
3.6
⎯
⎯
1.0
⎯
10.0
μΑ
⎯
VIL
VOH
⎯
3.0 to 3.6
High-level
⎯
2.3 to 2.7
input voltage
⎯
1.4 to 1.6
Low-level
⎯
VCC
× 0.2
VIN= VCC
Input leakage
current
IIN
VIN = 0 to 3.6 V
Quiescent
supply current
ICC
VIN = VCC or GND
3
V
V
V
2014-03-01