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RR264M-400TR
Data Sheet Rectifier Diode RR264M-400 Applications Gneral rectification Dimensions (Unit : mm) Land size figure (Unit : mm) 0.1±0.1 0.05 1.2 0.85 1.6±0.1 2.6±0.1 ① 3.5±0.2 3.05 Features 1)Small power mold type（PMDU） 2)High Reliability PMDU Construction Silicon diffused junction 0.9±0.1 0.8±0.1 ROHM : PMDU JEDEC :SOD-123 Manufacture Date Structure Taping specifications（Unit : mm） 4.0±0.1 1.81±0.1 Absolute maximum ratings (Ta=25C) Parameter Symbol VR Reverse voltage(DC) IF Forward current(DC) Average rectified forward current(*1) Io IFSM Forward current surge peak （60Hz/1cyc） Junction temperature Tj Storage temperature Tstg 8.0±0.2 φ1.0±0.1 Limits 1.5MAX Unit 400 1 0.7 25 150 -55 to +150 3.71±0.1 0.25±0.05 1.75±0.1 φ1.55±0.05 2.0±0.05 3.5±0.05 4.0±0.1 V A A A C C (*1)Mounting on epoxy board. 180°Half sine wave Electrical characteristics（Ta=25C） Parameter Min. Typ. Max. Forward voltage Symbol VF - - 1.1 V Reverse current IR - - 10 uA www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 1/3 Conditions Unit IF=0.7A VR=400V 2012.09 - Rev.F Data Sheet RR264M-400 0.01 2 2 Io REVERSE POWER DISSIPATION:PR (W) 0.008 0.006 Sin(=180) D=1/2 0.004 DC 0.002 0 Io 0A Io 0V 0 VR 0V VR t 1.5 DC T 1 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) AVERAGE RECTIFIED FORWARD CURRENT : Io(A) 0A0 D=t/T VR=200V Tj=150C D=1/2 0.5 Sin(=180) 0 0 100 200 300 400 REVERSE VOLTAGE : VR(V) VR-PR CHARACTERISTICS t 1.5 T DC 1 D=t/T VR=200V Tj=150C D=1/2 0.5 Sin(=180) 0 0 25 50 75 100 125 AMBIENT TEMPERATURE : Ta(℃) Derating Curve"(Io-Ta)" 150 0 25 50 75 100 125 150 CASE TEMPARATURE : Tc(℃) Derating Curve"(Io-Tc)" ELECTROSTATIC DISCHARGE TEST ESD(KV) 30 25 AVE:28.4kV 20 15 10 5 AVE:6.90kV 0 C=200pF R=0 C=100pF R=1.5k ESD DISPERSION MAP www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 2/3 2012.09 - Rev.F
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