SQP120N10-3m8
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Vishay Siliconix
Automotive N-Channel 100 V (D-S) 175 °C MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
• TrenchFET® Power MOSFET
100
RDS(on) () at VGS = 10 V
• Package with Low Thermal Resistance
0.0038
ID (A)
• AEC-Q101 Qualifiedd
120
Configuration
• 100 % Rg and UIS Tested
Single
TO-220
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
D
G
Top View
S
G D S
N-Channel MOSFET
ORDERING INFORMATION
Package
TO-220
Lead (Pb)-free and Halogen-free
SQP120N10-3m8-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
VDS
100
Gate-Source Voltage
VGS
± 20
Continuous Drain Current
TC = 25 °Ca
TC = 125 °C
Continuous Source Current (Diode Conduction)a
Pulsed Drain
Single Pulse Avalanche Energy
Maximum Power Dissipationb
102
TC = 25 °C
TC = 125 °C
120
IDM
L = 0.1 mH
V
120
IS
Currentb
Single Pulse Avalanche Current
ID
UNIT
A
480
IAS
73
EAS
266
PD
250
83
mJ
W
TJ, Tstg
- 55 to + 175
°C
SYMBOL
Operating Junction and Storage Temperature Range
LIMIT
UNIT
RthJA
40
RthJC
0.6
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Case (Drain)
PCB Mountc
°C/W
Notes
a. Package limited.
b. Pulse test; pulse width 300 μs, duty cycle 2 %.
c. When mounted on 1" square PCB (FR-4 material).
d. Parametric verification ongoing.
S13-1433-Rev. A, 01-Jul-13
Document Number: 63403
1
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
