TC7SZ00AFE
TOSHIBA CMOS Digital Integrated Circuit
Silicon Monolithic
TC7SZ00AFE
2 Input NAND Gate
Features
•
High output drive:
•
•
Super high speed operation: tPD = 2.4 ns (typ.)
at VCC = 5 V, 50 pF
•
Operation voltage range: VCC (opr) = 1.8~5.5 V
±24 mA (min)
at VCC = 3 V
•
Supply voltage data retention: VCC = 1.5~5.5 V
•
5.5-V tolerant inputs.
•
Matches the performance of TC74LCX series when operated at
3.3-V VCC
(ESV)
Weight: 0.003 g (typ.)
Marking
Pin Assignment (top view)
Product name
R
5 VCC
IN B 1
1
IN A 2
GND 3
4 OUT Y
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Supply voltage range
VCC
−0.5~6
V
DC input voltage
VIN
−0.5~6
V
VOUT
−0.5~VCC + 0.5
V
Input diode current
IIK
−20
mA
Output diode current
IOK
±20
mA
DC output current
IOUT
±50
mA
DC VCC/ground current
ICC
±50
mA
Power dissipation
PD
150
mW
Storage temperature
Tstg
−65~150
°C
TL
260
°C
DC output voltage
Lead temperature (10 s)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1
2007-11-01
