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TC7SZ00FTE85L,F
TC7SZ00F TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7SZ00F 2-Input NAND Gate Features • High output current : ±24 mA (min) at VCC = 3 V • Super high speed operation : tpd = 2.4 ns (typ.) at VCC = 5 V, 50 pF • Operating voltage range • 5.5-V tolerant inputs : VCC = 1.8 to 5.5 V • 5.5-V power down protection output • Matches the performance of TC74LCX series when operated at 3.3-V VCC (SMV) Weight: 0.016 g (typ.) Marking Product Name J 1 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Supply voltage VCC −0.5 to 6 V DC input voltage VIN −0.5 to 6 V DC output voltage VOUT Input diode current IIK −20 Output diode current IOK −20 DC output current IOUT ±50 mA DC VCC/ground current ICC ±50 mA Power dissipation PD 200 mW Storage temperature Tstg −65 to 150 °C TL 260 °C Lead temperature (10 s) −0.5 to 6 (Note 1) Pin Assignment (top view) V IN B −0.5 to VCC +0.5 (Note 2) 1 IN A 2 GND 3 5 VCC mA (Note 3) mA 4 OUT Y Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: VCC = 0 V Note 2: High or Low State. Do not exceed IOUT of absolute maximum ratings. Note 3: VOUT < GND Start of commercial production 1998-08 1 2015-07-17
TOSHIBA
株式会社 東芝セミコンダクター&ストレージ社
日本
半導体部門、DRAM、フラッシュメモリ、プロセッサ、汎用LSI
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