JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
TO – 92
2SC1318
TRANSISTOR (NPN)
1. EMITTER
2. COLLECTOR
FEATURES
Low Collector to Emitter Saturation Voltage VCE(sat)
Complementary Pair with 2SA720
3. BASE
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
60
V
VCEO
Collector-Emitter Voltage
50
V
7
V
IC
Collector Current
Emitter-Base Voltage
500
mA
PC
Collector Power Dissipation
625
mW
Thermal Resistance From Junction To Ambient
200
℃/W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-55~+150
℃
VEBO
RθJA
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC= 0.01mA,IE=0
60
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=10mA,IB=0
50
V
Emitter-base breakdown voltage
V(BR)EBO
IE=0.01mA,IC=0
7
V
Collector cut-off current
ICBO
VCB=20V,IE=0
0.1
μA
Emitter cut-off current
IEBO
VEB=6V,IC=0
0.1
μA
hFE(1)
VCE=10V, IC=150mA
85
hFE(2)
VCE=10V, IC=500mA
40
Collector-emitter saturation voltage
VCE(sat)
IC=300mA,IB=30mA
0.6
V
Base-emitter saturation voltage
VBE (sat)
IC=300mA,IB=30mA
1.5
V
VCB=10V,IE=0, f=1MHz
15
pF
DC current gain
Cob
Collector output capacitance
fT
Transition frequency
VCE=10V,IC=50mA, f=200MHz
340
200
MHz
CLASSIFICATION OF hFE(1)
RANK
Q
R
S
RANGE
85-170
120-240
170-340
A,Dec,2010