2SC4505
Transistors
Power Transistor (400V, 0.1A)
2SC4505
Dimensions (Unit : mm)
Features
1) High breakdown voltage. (BVCEO = 400V)
2) Low saturation voltage,
typically VCE (sat)= 0.05V at IC / IB = 10mA / 1mA.
3) High switching speed, typically tf = 1.7µs at Ic =100mA.
4) Complements the 2SC4505 and the 2SA1759.
MPT3
1.5
2.5
4.0
0.5
4.5
1.6
(1)
(3)
1.0
(2)
Packaging specifications and hFE
Type
MPT3
PQ
Marking
Code
1.5
0.4
0.4
1.5
3.0
(1)Base
2SC4505
Package
hFE
0.5
0.4
CE∗
(2)Collector
(3)Emitter
T100
1000
Basic ordering unit (pieces)
∗ Denotes hFE
Absolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
VCBO
VCEO
VEBO
400
400
7
0.1
V
V
V
A (DC)
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
IC
Collector power dissipation
PC
Junction temperature
Tj
Tstg
Storage temperature
0.2
A (Pulse) ∗1
0.5
W
W
2
150
−55 to +150
∗2
°C
°C
∗1 Single pulse, Pw=20ms, Duty=1/2
∗2 When mounted on a 40×40×0.7mm ceramic board.
Electrical characteristics (Ta=25°C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
BVCBO
BVCEO
−
−
−
−
−
−
−
10
V
V
V
µA
IC=50µA
IC=1mA
IE=50µA
ICBO
400
400
7
−
IEBO
−
−
10
µA
VEB=6V
Collector-emitter saturation voltage
VCE(sat)
−
0.05
0.5
V
IC/IB=10mA/1mA
Base-emitter saturation voltage
VBE(sat)
−
−
1.5
V
IC/IB=10mA/1mA
hFE
fT
82
−
−
20
270
−
−
MHz
Cob
−
7
−
pF
VCB=10V , IE=0A , f=1MHz
ton
−
1
−
µs
IC=−100mA RL=1.5kΩ
tstg
−
5.5
−
µs
IB1=−IB2=10mA
tf
−
1.7
−
µs
VCC~−150V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Transition frequency
Output capacitance
Turn-on time
Storage time
Fall time
BVEBO
Conditions
VCB=400V
VCE=10V , IC=10mA
VCE=10V , IE=−10mA , f=10MHz
Rev.D
1/3
2SC4505
Transistors
RL=1.5kΩ
VIN
IB1
Base current wave form
IB2
IB1
IB2
TUT
~
−VCC_ 150V
Pw
~
Pw_50µs
duty cycle
90%
1%
IC
~
−VBB_6V
10%
Collector current wave form
ton
tstg tf
Fig.10 Switching time mesurement circuit
Rev.D
3/3
