FQPF12N60
April 2000
QFET
TM
FQPF12N60
600V N-Channel MOSFET
General Description
Features
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supply.
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5.8A, 600V, RDS(on) = 0.7 Ω @ VGS = 10 V
Low gate charge ( typical 42 nC)
Low Crss ( typical 25 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
D
!
"
! "
"
"
G!
GD S
TO-220F
Absolute Maximum Ratings
Symbol
VDSS
!
FQPF Series
S
TC = 25°C unless otherwise noted
Parameter
ID
IDM
Drain Current
FQPF12N60
Drain-Source Voltage
- Continuous (TC = 25°C)
Drain Current
V
5.8
- Continuous (TC = 100°C)
- Pulsed
Units
600
A
3.7
A
23
(Note 1)
A
VGSS
Gate-Source Voltage
±30
V
EAS
Single Pulsed Avalanche Energy
(Note 2)
790
mJ
IAR
Avalanche Current
(Note 1)
5.8
A
EAR
Repetitive Avalanche Energy
(Note 1)
5.5
mJ
dv/dt
PD
Peak Diode Recovery dv/dt
Power Dissipation (TC = 25°C)
(Note 3)
4.5
55
0.44
-55 to +150
Vns
W
W/°C
°C
300
°C
TJ, TSTG
TL
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8 from case for 5 seconds
Thermal Characteristics
Symbol
RθJC
Typ
Max
Thermal Resistance, Junction-to-Case
Parameter
--
2.27
°CW
RθJA
Thermal Resistance, Junction-to-Ambient
--
62.5
°CW
©2000 Fairchild Semiconductor International
Units
Rev. A, April 2000
