US1A - US1M
Taiwan Semiconductor
CREAT BY ART
1A, 50V - 1000V High Efficient Surface Mount Rectifiers
FEATURES
- Glass passivated chip junction
- Ideal for automated placement
- Low forward voltage drop
- Ultrafast recovery time for high efficiency
- Built-in strain relief
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
DO-214AC (SMA)
MECHANICAL DATA
Case: DO-214AC (SMA)
Molding compound, UL flammability classification rating 94V-0
Moisture sensitivity level: level 1, per J-STD-020
Part No. with suffix "H" means AEC-Q101 qualified
Packing code with suffix "G" means green compound (halogen-free)
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 2 whisker test
Polarity: Indicated by cathode band
Weight: 0.06 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
PARAMETER
SYMBOL
US
US
US
US
US
US
US
1A
1B
1D
1G
1J
1K
1M
UNIT
Maximum repetitive peak reverse voltage
VRRM
50
100
200
400
600
800
1000
V
Maximum RMS voltage
VRMS
35
70
140
280
420
560
700
V
Maximum DC blocking voltage
VDC
50
100
200
400
600
800
1000
V
Maximum average forward rectified current
IF(AV)
1
A
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
IFSM
30
A
Maximum instantaneous forward voltage (Note 1)
@1A
Maximum reverse current @ rated VR
TJ=25°C
TJ=125°C
VF
1.0
1.7
5
IR
V
μA
150
Maximum reverse recovery time (Note 2)
trr
50
75
ns
Typical junction capacitance (Note 3)
CJ
15
10
pF
Typical thermal resistance
Operating junction temperature range
Storage temperature range
RθJL
RθJA
27
75
°C/W
TJ
- 55 to +150
°C
TSTG
- 55 to +150
°C
Note 1: Pulse test with PW=300μs, 1% duty cycle
Note 2: Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A
Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
Document Number: DS_D1411072
Version: M15
