2SC4102 / 2SC3906K / 2SC2389S
Transistors
High-voltage Amplifier Transistor
(120V, 50mA)
2SC4102 / 2SC3906K / 2SC2389S
!External dimensions (Units : mm)
!Features
1) High breakdown voltage. (BVCEO = 120V)
2) Complements the 2SA1579 / 2SA1514K / 2SA1038S.
2.0
1.3
0.9
(2)
(3)
0.3
0.65 0.65
0.7
(1)
2SC4102
1.25
!Absolute maximum ratings (Ta=25°C)
Junction temperature
Storage temperature
PC
Tj
Tstg
0.2
Unit
V
V
V
mA
Limits
120
120
5
50
0.2
0.3
150
−55~+150
0~0.1
Symbol
VCBO
VCEO
VEBO
IC
0.15
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power 2SC4102 / 2SC3906K
dissipation
2SC2389S
2.1
0.1Min.
Each lead has same dimensions
ROHM : UMT3
EIAJ : SC-70
JEDEC : SOT-323
W
°C
°C
(1) Emitter
(2) Base
(3) Collector
T∗
T106
3000
T∗
T146
3000
∗Denotes h
(2)
1.6
2.8
0.3Min.
FE
Each lead has same dimensions
ROHM : SMT3
EIAJ : SC-59
JEDEC : SOT-346
2SC2389S
1.1
Marking
Code
Basic ordering unit (pieces)
2SC2389S
SPT
RS
−
TP
5000
0.8
2SC3906K
SMT3
RS
0~0.1
2SC4102
UMT3
RS
Type
0.15
Package
hFE
(3)
0.4
!Packaging specifications and hFE
0.95 0.95
1.9
2.9
(1)
2SC3906K
(1) Emitter
(2) Base
(3) Collector
2
(15Min.)
3Min.
3
4
0.45
2.5
0.5 0.45
5
(1) (2) (3)
ROHM : SPT
EIAJ : SC-72
!Electrical characteristics (Ta=25°C)
Symbol
Min.
Typ.
Max.
Unit
Collector-base breakdown voltage
Parameter
BVCBO
120
−
−
V
IC=50µA
Conditions
Collector-emitter breakdown voltage
BVCEO
Emitter-base breakdown voltage
120
−
V
IC=1mA
BVEBO
5
−
−
V
IE=50µA
Collector cutoff current
ICBO
−
−
0.5
µA
VCB=100V
Emitter cutoff current
IEBO
−
−
0.5
µA
VEB=4V
VCE(sat)
−
−
0.5
V
IC/IB=10mA/1mA
DC current transfer ratio
hFE
180
−
560
−
VCE=6V, IC=2mA
Transition frequency
fT
−
140
−
MHz
Output capacitance
Cob
−
2.5
−
pF
Collector-emitter saturation voltage
−
VCE=12V, IE=−2mA, f=100MHz
VCB=12V, IE=0A, f=1MHz
Taping specifications
(1) Emitter
(2) Collector
(3) Base
