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2SK1062-TE85L
2SK1062 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1062 High Speed Switching Applications Analog Switching Applications Interface Applications Unit: mm • Excellent switching time: ton = 14 ns (typ.) • High forward transfer admittance: |Yfs| = 100 ms (min) @ID = 50 mA • Low on resistance: RDS (ON) = 0.6 Ω (typ.) @ ID = 50 mA • Enhancement-mode • Complementary to 2SJ168 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDS 60 V Gate-source voltage VGSS ±20 V DC ID 200 Pulse IDP 800 Drain power dissipation (Ta = 25°C) PD 200 mW Channel temperature Tch 150 °C Storage temperature range Tstg −55~150 °C Drain current mA JEDEC ― JEITA SC-59 TOSHIBA 2-3F1F Weight: 0.012 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Marking 1 2007-11-01
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