SF57L10D4
PRODUCT DATA SHEET
100 VOLT, 57 AMP N-CHANNEL MOSFET IN HERMETIC TO-254 PACKAGE
ABSOLUTE MAXIMUM RATINGS @ TC = 25°C, unless otherwise stated
Parameter
Rating
Units
100
57
V
A
40
A
BVDSS
ID @ VGS = 10V, TC = 25°C
Drain to Source Breakdown Voltage
Continuous Drain Current 1/
ID @ VGS = 10V, TC = 100°C
Continuous Drain Current 1/
IDM
Pulsed Drain Current
180
A
PD @ TC = 25°C
Maximum Power Dissipation
200
W
VGS
Gate to Source Voltage
±20
V
dv/dt
Peak Diode Recovery dv/dt
5.0
V/ns
TJ
Operating Junction Temperature
-55 to +175
°C
TSTG
Storage Temperature
-55 to +175
°C
300
°C
Lead Temperature (0.063 in. from case for 10s)
1/ Package pins limited to 25A continuous
ELECTRICAL CHARACTERISTICS @ TJ = 25°C, unless otherwise stated
Parameter
BVDSS
Min.
Typ.
Max.
Units
Test Conditions
VGS(th)
gfs
IDSS
100
-
-
V
VGS = 0V, ID = 1.0 mA
-
0.028
0.030
Ω
VGS = 10V, ID = 28A
2.0
-
4.0
V
VDS = VGS , ID = 250 µA
Forward
Transconductance
Zero Gate Voltage
Drain Current
RDS(on)
Drain to Source
Breakdown Voltage
Static Drain to Source On
State Resistance
Gate Threshold Voltage
20
-
-
-
-
VDS = 25V, IDS = 28A
25
VDS = 100V, VGS = 0V
µA
250
-
-
100
nA
-
-
-100
nA
VGS = -20V
Qg
Gate to Source Leakage
Forward
Gate to Source Leakage
Reverse
Total Gate Charge
VDS = 0.8 x Max. Rating
VGS = 0V, TJ = 125°C
VGS = 20V
-
-
190
Qgs
Gate to Source Charge
-
-
26
Qgd
Gate to Drain Charge
-
-
82
IGSS
IGSS
FMI
•
530 Turnpike Street
•
North Andover, Massachusetts
ID = 28A
nC
VDS = Max. Rating X 0.8
VGS = 1.7V
•
Tel: 978.975.3385
•
Fax: 978.975.3506
