Low Noise Transistors
BC549B,C
BC550B,C
NPN Silicon
MAXIMUM RATINGS
Rating
Symbol
BC549
BC550
Unit
Collector–Emitter Voltage
VCEO
30
45
Vdc
Collector–Base Voltage
VCBO
30
50
Vdc
Emitter–Base Voltage
VEBO
5.0
Vdc
Collector Current — Continuous
IC
100
mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25°C
PD
625
5.0
mW
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
1.5
12
Watt
mW/°C
TJ, Tstg
–55 to +150
°C
Symbol
Max
Unit
Operating and Storage Junction
Temperature Range
1
2
3
CASE 29–04, STYLE 17
TO–92 (TO–226AA)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
RqJA
200
°C/W
Thermal Resistance, Junction to Case
RqJC
83.3
COLLECTOR
1
°C/W
2
BASE
3
EMITTER
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
30
45
—
—
—
—
30
50
—
—
—
—
5.0
—
—
Vdc
—
—
Characteristic
Unit
—
—
15
5.0
nAdc
µAdc
—
—
15
nAdc
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 10 mAdc, IB = 0)
Collector–Base Breakdown Voltage
(IC = 10 µAdc, IE = 0)
V(BR)CEO
BC549B,C
BC550B,C
Vdc
V(BR)CBO
BC549B,C
BC550B,C
Emitter–Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
V(BR)EBO
Collector Cutoff Current
(VCB = 30 V, IE = 0)
(VCB = 30 V, IE = 0, TA = +125°C)
ICBO
Emitter Cutoff Current
(VEB = 4.0 Vdc, IC = 0)
IEBO
Vdc
© Semiconductor Components Industries, LLC, 2001
February, 2001 – Rev. 1
1
Publication Order Number:
BC549B/D
