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部品型式

4N20

製品説明
仕様・特性

MTD4N20E Preferred Device Power MOSFET 4 Amps, 200 Volts N−Channel DPAK MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Value Unit Drain−Source Voltage VDSS 200 Vdc Drain−Gate Voltage (RGS = 1.0 MΩ) VDGR 200 Vdc Gate−Source Voltage − Continuous − Non−repetitive (tp ≤ 10 ms) VGS VGSM ± 20 ± 40 Vdc Vpk ID ID 4.0 2.6 12 Adc PD 40 0.32 1.75 Watts W/°C Watts TJ, Tstg −55 to 150 °C EAS 80 3.13 100 71.4 TL 260 RDS(on) TYP ID MAX 200 V 0.98 W 4.0 A N−Channel D Rating Drain Current − Continuous Drain Current − Continuous @ 100°C Drain Current − Single Pulse (tp ≤ 10 µs) Total Power Dissipation @ TC = 25°C Derate above 25°C Total Power Dissipation @ TA = 25°C (Note 2) Operating and Storage Temperature Range Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = 80 Vdc, VGS = 10 Vdc, IL = 4.0 Apk, L = 10 mH, RG = 25 Ω) Thermal Resistance − Junction to Case − Junction to Ambient (Note 1) − Junction to Ambient (Note 2) Maximum Temperature for Soldering Purposes, 1/8″ from case for 10 seconds IDM Apk °C/W 4 G 4 S 1 1 2 3 2 3 CASE 369D DPAK (Straight Lead) STYLE 2 CASE 369C DPAK (Surface Mount) STYLE 2 mJ RθJC RθJA RθJA V(BR)DSS MARKING DIAGRAM & PIN ASSIGNMENTS 4 Drain 4 Drain YWW T4 N20E Symbol http://onsemi.com YWW T4 N20E This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance over time. In addition this advanced high voltage MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. • Avalanche Energy Specified • Source−to−Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode • Diode is Characterized for Use in Bridge Circuits • IDSS and VDS(on) Specified at Elevated Temperature 2 1 3 Drain Gate Source Y WW 4N20E 1 2 3 Gate Drain Source = Year = Work Week = Device Code ORDERING INFORMATION Device 1. When surface mounted to an FR4 board using the minimum recommended pad size. 2. When surface mounted to an FR4 board using 0.5 sq. in. drain pad size. Shipping DPAK 75 Units/Rail MTD4N20E−1 °C Package DPAK Straight Lead 75 Units/Rail MTD4N20ET4 DPAK 2500 Tape & Reel MTD4N20E Preferred devices are recommended choices for future use and best overall value. © Semiconductor Components Industries, LLC, 2003 September, 2004 − Rev. XXX 1 Publication Order Number: MTD4N20E/D

ブランド

MOT

現況

1999年8月4日、ディスクリート・標準アナログ・標準ロジックなどの半導体部門をオン・セミコンダクターとして分社化した。これは、イリジウムコミュニケーションズ倒産の損失をカバーするために分社化された。

会社名

ON Semiconductor

本社国名

U.S.A

事業概要

オン・セミコンダクターの前身は、モトローラ社の半導体コンポーネント・グループであり、モトローラ社のディスクリート、標準アナログ、標準ロジック・デバイスを継続して製造。

供給状況

 
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4N0047JANTX 4N0047JANTXHS 4N0048JANTX 4N0049AJANTX 4N0049JAN
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4N0406 4N04H1 4N05L-RFPTO220 4N-0675 4N0699
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4N1120 4N1201-TPE4 4N12711-101A 4N12RS3N 4N12RS5N
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4N200W-10 4N200W-20 4N200W-30 4N200W-40 4N-20-20-SH
4N205 4N-2075 4N20D 4N20E 4N22
4N22A 4N22AJAN 4N22AJTX 4N22AJTXV 4N22JAN
4N22JANTX 4N23 4N23A 4N23AJANTX 4N23-DIP
4N23JAN 4N23JANTX 4N23JANTXJANTX4N23JTX4 4N23JANTXV 4N23JTX
4N23JV 4N23U 4N24 4N24A 4N24A8412V
4N24A84412V 4N24ACEJG 4N24AJAN 4N24AJANTX 4N24AJANTXV
4N24AJTX 4N24AJTXV 4N24AJV 4N24AJX 4N24AU
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4N25-0433K 4N25-060E 4N25-14 4N25200D 4N25-200E
4N25300 4N25-300E 4N25300W 4N25360 4N25-360E
4N253S 4N253SD 4N254N25MLTV4N25 4N25-500E 4N25-560E
4N255R2M 4N2560TUBE 4N2564 4N258704 4N25A
4N25AN 4N25AQT-ND 4N25ASHORT,F 4N25AV940 4N25AVAGOPB3
4N25B 4N25CG36 4N25DIP61-CHO 4N25FS 4N25G
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4N25MOT 4N25-MOT94 4N25M-V 4N25N 4N25N8818
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4N25S1TA 4N25S1TA-V 4N25SD 4N25SDM 4N25SDPB
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4N25-SIEMENS93 4N25SM 4N25SMD 4N25SMTR 4N25SR2
4N25SR2M 4N25SR2M-CUTTAPE 4N25SR2MPBFREE 4N25SR2V-M 4N25S-TA
4N25S-TA1 4N25S-TA1-AD 4N25SV-M 4N25TFK 4N25TM
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