MTD4N20E
Preferred Device
Power MOSFET
4 Amps, 200 Volts
N−Channel DPAK
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Value
Unit
Drain−Source Voltage
VDSS
200
Vdc
Drain−Gate Voltage (RGS = 1.0 MΩ)
VDGR
200
Vdc
Gate−Source Voltage
− Continuous
− Non−repetitive (tp ≤ 10 ms)
VGS
VGSM
± 20
± 40
Vdc
Vpk
ID
ID
4.0
2.6
12
Adc
PD
40
0.32
1.75
Watts
W/°C
Watts
TJ, Tstg
−55 to
150
°C
EAS
80
3.13
100
71.4
TL
260
RDS(on) TYP
ID MAX
200 V
0.98 W
4.0 A
N−Channel
D
Rating
Drain Current − Continuous
Drain Current − Continuous @ 100°C
Drain Current − Single Pulse (tp ≤ 10 µs)
Total Power Dissipation @ TC = 25°C
Derate above 25°C
Total Power Dissipation @ TA = 25°C (Note 2)
Operating and Storage Temperature Range
Single Pulse Drain−to−Source Avalanche
Energy − Starting TJ = 25°C
(VDD = 80 Vdc, VGS = 10 Vdc,
IL = 4.0 Apk, L = 10 mH, RG = 25 Ω)
Thermal Resistance
− Junction to Case
− Junction to Ambient (Note 1)
− Junction to Ambient (Note 2)
Maximum Temperature for Soldering
Purposes, 1/8″ from case for 10 seconds
IDM
Apk
°C/W
4
G
4
S
1
1 2
3
2
3
CASE 369D
DPAK
(Straight Lead)
STYLE 2
CASE 369C
DPAK
(Surface Mount)
STYLE 2
mJ
RθJC
RθJA
RθJA
V(BR)DSS
MARKING DIAGRAM
& PIN ASSIGNMENTS
4
Drain
4
Drain
YWW
T4
N20E
Symbol
http://onsemi.com
YWW
T4
N20E
This high voltage MOSFET uses an advanced termination scheme
to provide enhanced voltage−blocking capability without degrading
performance over time. In addition this advanced high voltage
MOSFET is designed to withstand high energy in the avalanche and
commutation modes. The energy efficient design also offers a
drain−to−source diode with a fast recovery time. Designed for high
voltage, high speed switching applications in power supplies,
converters and PWM motor controls, these devices are particularly
well suited for bridge circuits where diode speed and commutating
safe operating areas are critical and offer additional safety margin
against unexpected voltage transients.
• Avalanche Energy Specified
• Source−to−Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature
2
1
3
Drain
Gate
Source
Y
WW
4N20E
1 2 3
Gate Drain Source
= Year
= Work Week
= Device Code
ORDERING INFORMATION
Device
1. When surface mounted to an FR4 board using the minimum recommended
pad size.
2. When surface mounted to an FR4 board using 0.5 sq. in. drain pad size.
Shipping
DPAK
75 Units/Rail
MTD4N20E−1
°C
Package
DPAK
Straight Lead
75 Units/Rail
MTD4N20ET4
DPAK
2500 Tape & Reel
MTD4N20E
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2003
September, 2004 − Rev. XXX
1
Publication Order Number:
MTD4N20E/D