HOME>在庫検索>在庫情報
1SS302
1SS302 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS302 Ultra High Speed Switching Applications Small package : SC-70 Low forward voltage Unit: mm : VF (3) = 0.90V (typ.) Fast reverse recovery time : trr = 1.6ns (typ.) Small total capacitance : CT = 0.9pF (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 85 V Reverse voltage VR 80 V Maximum (peak) forward current IFM 300 (*) mA Average forward current IO 100 (*) mA IFSM 2 (*) A Power dissipation P 100 mW Junction temperature Tj 125 Maximum (peak) reverse voltage Surge current (10ms) Storage temperature Tstg JEDEC ― SC-70 °C TOSHIBA 1-2P1C °C −55 to 125 JEITA Weight: 0.006g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). *: Unit rating. Total rating = unit rating × 0.7 Electrical Characteristics (Ta = 25°C) Symbol Test Circuit VF (1) Characteristic ― VF (2) Min Typ. Max IF = 1mA ― 0.60 ― ― IF = 10mA ― 0.72 ― VF (3) ― IF = 100mA ― 0.90 1.20 IR (1) ― VR = 30V ― ― 0.1 IR (2) ― VR = 80V ― ― 0.5 Total capacitance CT ― VR = 0, f = 1MHz ― 0.9 3.0 pF Reverse recovery time trr ― IF = 10mA, Fig.1 ― 1.6 4.0 ns Forward voltage Reverse current Test Condition Unit V μA Start of commercial production 1986-11 1 2014-03-01
TOSHIBA
株式会社 東芝セミコンダクター&ストレージ社
日本
半導体部門、DRAM、フラッシュメモリ、プロセッサ、汎用LSI
宅配業者の代金引換又は商品到着後一週間以内の銀行振込となります。