IDT54/74FCT827A/B
HIGH-PERFORMANCECMOSBUFFER
MILITARY AND COMMERCIAL TEMPERATURE RANGES
IDT54/74FCT827A/B
HIGH-PERFORMANCE
CMOS BUFFER
FEATURES:
DESCRIPTION:
• Faster than AMD's Am29827 series
• Equivalent to AMD's Am29827bipolar buffers in pinout/function,
speed, and output drive over full temperature and voltage
supply extremes
• IDT54/74FCT827A equivalent to FAST™ speed
• IDT54FCT827B 35% faster than FAST
• IOL = 48mA (commercial) and 32mA (military)
• Clamp diodes on all inputs for ringing suppression
• CMOS power levels (1mW typ. static)
• TTL input and output level compatible
• CMOS output level compatible
• Substantially lower input current levels than AMD's bilopar
Am29800 series (5µA max.)
µ
• MIlitary product compliant to MIL-STD-883, Class B
• Available in the following packages:
– Commercial: SOIC
– Military: CERDIP, LCC
The IDT54/74FCT800 series is built using an advanced dual metal
CMOS technology.
The IDT54/74FCT827 10-bit bus drivers provide high-performance bus
interface buffering for wide data/address paths or buses carrying parity. The
10-bit buffers have NAND-ed output enables for maximum control flexibility.
All of the IDT54/74FCT800 high-performance interface family are designed for high-capacitance load drive capability, while providing lowcapacitance bus loading at both inputs and outputs. All inputs have clamp
diodes and all outputs are designed for low-capacitance bus loading in highimpedance state.
FUNCTIONAL BLOCK DIAGRAM
Y
Y
Y
Y
Y
Y
Y
Y
Y
Y
0
1
2
3
4
5
6
7
8
9
D0
D1
D2
D3
D4
D5
D6
D7
D8
D9
MILITARY AND COMMERCIAL TEMPERATURE RANGES
OE
1
The IDT logo is a registered trademark of Integrated Device Technology, Inc.
OE
2
OCTOBER 2002
1
© 2002 Integrated Device Technology, Inc.
DSC-4612/5
IDT54/74FCT827A/B
HIGH-PERFORMANCECMOSBUFFER
MILITARY AND COMMERCIAL TEMPERATURE RANGES
FUNCTION TABLE(1)
PIN DESCRIPTION
Pin Name
I/O
OEx
I
When both are LOW, the outputs are enabled. When
either one or both are HIGH, the outputs are High Z.
Description
Dx
I
10-bit data input
Yx
O
10-bit data output
Inputs
Outputs
OE1
OE2
Dx
Yx
Function
L
L
L
L
Transparent
L
L
H
H
H
X
X
Z
X
H
X
Z
3-State
NOTE:
1. H = HIGH Voltage Level
L = LOW Voltage Level
X = Don’t Care
Z = High Impedance
DC ELECTRICAL CHARACTERISTICS OVER OPERATING RANGE
Following Conditions Apply Unless Otherwise Specified: VLC = 0.2V; VHC = VCC - 0.2V
Commercial: TA = 0°C to +70°C, VCC = 5.0V ±5%, Military: TA = -55°C to +125°C, VCC = 5.0V ±10%
Symbol
Test Conditions(1)
Parameter
Min.
Typ.(2)
Max.
Unit
VIH
Input HIGH Level
Guaranteed Logic HIGH Level
2
—
—
V
VIL
Input LOW Level
Guaranteed Logic LOW Level
—
—
0.8
V
IIH
Input HIGH Current
VI = VCC
—
—
5
VI = 2.7V
—
—
5(4)
VI = 0.5V
—
—
–5(4)
VI = GND
—
—
–5
VO = VCC
VO = 2.7V
VO = 0.5V
VO = GND
—
—
—
—
—
—
—
—
—
–0.7
10
10(4)
–10(4)
–10
–1.2
–75
VHC
VHC
2.4
2.4
—
—
—
—
–120
VCC
VCC
4.3
4.3
GND
GND
0.3
0.3
—
—
—
—
—
VLC
VLC(4)
0.5
0.5
VCC = Max.
IIL
Input LOW Current
IOZH
VCC = Max.
IOZL
Off State (High Impedance)
Output Current
VIK
Clamp Diode Voltage
VCC = Min., IIN = –18mA
IOS
VOH
VOL
Short Circuit Current
Output HIGH Voltage
Output LOW Voltage
GND(3)
VCC = Max., VO =
VCC = 3V, VIN = VLC or VHC, IOH = –32µA
VCC = Min
IOH = –300µA
VIN = VIH or VIL
IOH = –15mA MIL
IOH = –24mA COM'L
VCC = 3V, VIN = VLC or VHC, IOL = 300µA
VCC = Min
IOL = 300µA
VIN = VIH or VIL
IOL = 32mA MIL
IOL = 48mA COM'L
NOTES:
1. For conditions shown as Min. or Max., use appropriate value specified under Electrical Characteristics for the applicable device type.
2. Typical values are at VCC = 5.0V, +25°C ambient and maximum loading.
3. Not more than one output should be tested at one time. Duration of the test should not exceed one second.
4. This parameter is guaranteed but not ttested.
3
µA
µA
V
mA
V
V
