SiT8008
Low Power Programmable Oscillator
The Smart Timing Choice
The Smart Timing Choice
Features
Applications
Any frequency between 1 MHz and 110 MHz accurate to 6 decimal
places
Ideal for DSC, DVC, DVR, IP CAM, Tablets, e-Books, SSD,
GPON, EPON, etc
Operating temperature from -40°C to 85°C. Refer to SiT8918 and
SiT8920 for high temperature options
Ideal for high-speed serial protocols such as: USB, SATA, SAS,
Firewire, 100M / 1G / 10G Ethernet, etc.
Excellent total frequency stability as low as ±20 PPM
Low power consumption of 3.6 mA typical
Programmable drive strength for improved jitter, system EMI
reduction, or driving large capacitive loads
LVCMOS/HCMOS compatible output
Industry-standard packages: 2.0 x 1.6, 2.5 x 2.0, 3.2 x 2.5, 5.0 x 3.2,
7.0 x 5.0 mm x mm
Instant samples with Time Machine II and field programmable
oscillators
Pb-free, RoHS and REACH compliant
Electrical Characteristics[1]
Parameter and Conditions
Symbol
Min.
Typ.
Max.
Unit
Condition
Frequency Range
Output Frequency Range
f
1
–
110
MHz
Frequency Stability and Aging
Frequency Stability
F_stab
-20
–
+20
PPM
-25
–
+25
PPM
–
+50
PPM
-50
Inclusive of Initial tolerance at 25°C, 1st year aging at 25°C, and
variations over operating temperature, rated power supply
voltage and load (15 pF ± 10%).
Operating Temperature Range
Operating Temperature Range
T_use
-20
–
+70
°C
Extended Commercial
-40
–
+85
°C
Industrial
Supply Voltage and Current Consumption
Supply Voltage
1.8
1.98
V
2.5
2.75
V
2.52
2.8
3.08
V
2.7
3.0
3.3
V
2.97
3.3
3.63
V
2.25
–
3.63
V
–
3.8
4.5
mA
No load condition, f = 20 MHz, Vdd = 2.8V, 3.0V, 3.3V, 2.25V to 3.63V
–
3.6
4.2
mA
No load condition, f = 20 MHz, Vdd = 2.5V
–
Idd
1.62
2.25
Current Consumption
Vdd
Contact SiTime for 1.5V support
3.4
3.9
mA
No load condition, f = 20 MHz, Vdd = 1.8V
–
4
mA
Vdd = 2.5V to 3.3V, OE = GND, output is Weakly Pulled Down
Vdd = 1.8V, OE = GND, output is Weakly Pulled Down
OE Disable Current
I_OD
–
–
–
3.8
mA
Standby Current
I_std
–
2.6
4.3
A
ST = GND, Vdd = 2.8V to 3.3V, Output is Weakly Pulled Down
–
1.4
2.5
A
ST = GND, Vdd = 2.5V, Output is Weakly Pulled Down
0.6
1.3
A
ST = GND, Vdd = 1.8V, Output is Weakly Pulled Down
–
LVCMOS Output Characteristics
Duty Cycle
DC
45
–
55
%
Tr, Tf
–
1
2
ns
Vdd = 2.5V, 2.8V, 3.0V or 3.3V, 20% - 80%
–
Rise/Fall Time
All Vdds
1.3
2.5
ns
Vdd =1.8V, 20% - 80%
–
–
2
ns
Output High Voltage
VOH
90%
–
–
Vdd
IOH = -4 mA (Vdd = 3.0V or 3.3V)
IOH = -3 mA (Vdd = 2.8V and Vdd = 2.5V)
IOH = -2 mA (Vdd = 1.8V)
Vdd = 2.25V - 3.63V, 20% - 80%
Output Low Voltage
VOL
–
–
10%
Vdd
IOL = 4 mA (Vdd = 3.0V or 3.3V)
IOL = 3 mA (Vdd = 2.8V and Vdd = 2.5V)
IOL = 2 mA (Vdd = 1.8V)
Input High Voltage
VIH
70%
–
–
Vdd
Input Low Voltage
VIL
–
–
30%
Vdd
Pin 1, OE or ST
Input Pull-up Impedence
Z_in
–
87
100
k
Pin 1, OE logic high or logic low, or ST logic high
Input Characteristics
Pin 1, OE or ST
2
–
–
M
Pin 1, ST logic low
Note:
1. All electrical specifications in the above table are specified with 15 pF output load at default drive strength and for all Vdd(s) unless otherwise stated.
SiTime Corporation
Rev. 1.11
990 Almanor Avenue
Sunnyvale, CA 94085
(408) 328-4400
www.sitime.com
Revised May 27, 2013
