FM18L08
256Kb Bytewide FRAM Memory
Features
256K bit Ferroelectric Nonvolatile RAM
• Organized as 32,768 x 8 bits
• 45 year Data Retention
• Unlimited Read/Write Cycles
• NoDelay™ Writes
• Advanced High-Reliability Ferroelectric Process
SRAM & EEPROM Compatible
• JEDEC 32Kx8 SRAM & EEPROM pinout
• 70 ns Access Time
• 140 ns Cycle Time
Low Power Operation
• 3.0V to 3.65V Operation
• 15 mA Active Current
• 15 µA Standby Current
D
E
D S
N N
E G
M SI 0
M E 02
O D 28V
C
E W : FM
R E ive
T N nat
O R lter
N O A
F
Superior to Battery-Backed SRAM
• No Battery Concerns
• Monolithic Reliability
• True Surface Mount Solution, No Rework Steps
• Superior for Moisture, Shock, and Vibration
• Resistant to Negative Voltage Undershoots
Description
The FM18L08 is a 256-kilobit nonvolatile memory
employing an advanced ferroelectric process. A
ferroelectric random access memory or FRAM is
nonvolatile and reads and writes like a RAM. It
provides data retention for 45 years while eliminating
the reliability concerns, functional disadvantages and
system design complexities of battery-backed SRAM
(BBSRAM). Fast write timing and high write
endurance make FRAM superior to other types of
nonvolatile memory.
Industry Standard Configuration
• Industrial Temperature -40° C to +85° C
• 32-pin “Green” TSOP Package
• 28-pin SOIC or DIP Package
• “Green” Packaging Options
Pin Configurations
NC
OE
A11
A9
A8
A13
WE
VDD
A14
A12
A7
A6
A5
A4
A3
NC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
TSOP-I
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
NC
A10
CE
DQ7
DQ6
DQ5
DQ4
DQ3
VSS
DQ2
DQ1
DQ0
A0
A1
A2
NC
In-system operation of the FM18L08 is very similar
to other RAM based devices. Read cycle and write
cycle times are equal. The FRAM memory, however,
is nonvolatile due to its unique ferroelectric memory
process. Unlike BBSRAM, the FM18L08 is a truly
monolithic nonvolatile memory. It provides the same
functional benefits of a fast write without the
disadvantages associated with modules and batteries
or hybrid memory solutions.
These capabilities make the FM18L08 ideal for
nonvolatile memory applications requiring frequent
or rapid writes in a bytewide environment. The
availability of a surface-mount package improves the
manufacturability of new designs, while the DIP
package facilitates simple design retrofits. Device
specifications are guaranteed over a temperature
range of -40°C to +85°C.
This product conforms to specifications per the terms of the Ramtron
standard warranty. The product has completed Ramtron’s internal
qualification testing and has reached production status.
Ordering Information
FM18L08-70-TG * 70 ns access, 32-pin “Green” TSOP
FM18L08-70-S *
70 ns access, 28-pin SOIC
FM18L08-70-P *
70 ns access, 28-pin DIP
FM18L08-70-SG * 70 ns access, 28-pin “Green” SOIC
FM18L08-70-PG * 70 ns access, 28-pin “Green” DIP
* End of life. Last time buy Nov. 2009.
Ramtron International Corporation
1850 Ramtron Drive, Colorado Springs, CO 80921
(800) 545-FRAM, (719) 481-7000
http://www.ramtron.com
Rev. 3.5
Sept. 2009
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