Features
• 2.7V to 3.6V Supply
– Full Read and Write Operation
• Low Power Dissipation
•
•
•
•
•
•
– 8 mA Active Current
– 50 µA CMOS Standby Current
Read Access Time – 300 ns
Byte Write – 3 ms
Direct Microprocessor Control
– DATA Polling
– READY/BUSY Open Drain Output
High Reliability CMOS Technology
– Endurance: 100,000 Cycles
– Data Retention: 10 Years
JEDEC Approved Byte-Wide Pinout
Industrial Temperature Ranges
1. Description
The AT28BV64 is a low-voltage, low-power Electrically Erasable and Programmable
Read-only Memory specifically designed for battery powered applications. Its 64K of
memory is organized 8,192 words by 8 bits. Manufactured with Atmel’s advanced
nonvolatile CMOS technology, the device offers access times to 200 ns with power
dissipation less than 30 mW. When the device is deselected the standby current is
less than 50 µA.
64K (8K x 8)
Battery-Voltage
Parallel
EEPROMs
AT28BV64
Not Recommended
for New Designs.
The AT28BV64 is accessed like a Static RAM for the read or write cycles without the
need for external components. During a byte write, the address and data are latched
internally, freeing the microprocessor address and data bus for other operations. Following the initiation of a write cycle, the device will go to a busy state and
automatically clear and write the latched data using an internal control timer. The
device includes two methods for detecting the end of a write cycle, level detection of
RDY/BUSY and DATA polling of I/O 7 . Once the end of a write cycle has been
detected, a new access for a read or write can begin.
Atmel’s AT28BV64 has additional features to ensure high quality and manufacturability. The device utilizes error correction internally for extended endurance and for
improved data retention characteristics. An extra 32-bytes of EEPROM are available
for device identification or tracking.
0493C–PEEPR–08/07
