Features
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Single-voltage Read/Write Operation: 2.7V to 3.6V (BV), 3.0V to 3.6V (LV)
Fast Read Access Time – 70 ns
Internal Erase/Program Control
Sector Architecture
– One 8K Word (16K Bytes) Boot Block with Programming Lockout
– Two 4K Word (8K Bytes) Parameter Blocks
– One 496K Word (992K Bytes) Main Memory Array Block
Fast Sector Erase Time – 10 seconds
Byte-by-byte or Word-by-word Programming – 30 µs Typical
Hardware Data Protection
Data Polling for End of Program Detection
Low Power Dissipation
– 25 mA Active Current
– 50 µA CMOS Standby Current
Typical 10,000 Write Cycles
Description
The AT49BV008A(T) and AT49BV/LV8192A(T) are 3-volt, 8-megabit Flash memories
organized as 1,048,576 words of 8 bits each or 512K words of 16 bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the devices offer access
times to 70 ns with power dissipation of just 67 mW at 2.7V read. When deselected,
the CMOS standby current is less than 50 µA.
Pin Configurations
Pin Name
Function
A0 - A18
Addresses
CE
Chip Enable
OE
Output Enable
WE
Reset
RDY/BUSY
Ready/Busy Output
VPP
VPP can be left unconnected or connected to VCC, GND, 5V or
12V. The input has no effect on the operation of the device.
I/O0 - I/O14
Data Inputs/Outputs
I/O15 (A-1)
I/O15 (Data Input/Output, Word Mode)
A-1 (LSB Address Input, Byte Mode)
BYTE
Selects Byte or Word Mode
NC
AT49BV008A
AT49BV008AT
AT49BV8192A
AT49BV8192AT
AT49LV8192A
AT49LV8192AT
Write Enable
RESET
8-megabit
(1M x 8/
512K x 16)
Flash Memory
No Connect
Rev. 1049J–FLASH–05/02
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