BC556/557/558/559/560
BC556/557/558/559/560
Switching and Amplifier
• High Voltage: BC556, VCEO= -65V
• Low Noise: BC559, BC560
• Complement to BC546 ... BC 550
TO-92
1
1. Collector 2. Base 3. Emitter
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol
VCBO
Parameter
Collector-Base Voltage
: BC556
: BC557/560
: BC558/559
VCEO
Value
-80
-50
-30
V
V
V
-65
-45
-30
Collector-Emitter Voltage
: BC556
: BC557/560
: BC558/559
Units
V
V
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current (DC)
-100
mA
PC
Collector Power Dissipation
500
mW
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
-65 ~ 150
°C
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
ICBO
Parameter
Collector Cut-off Current
Test Condition
VCB= -30V, IE=0
Min.
Typ.
Max.
-15
hFE
VCE
(sat)
DC Current Gain
VCE= -5V, IC=2mA
110
Collector-Emitter Saturation Voltage
IC= -10mA, IB= -0.5mA
IC= -100mA, IB= -5mA
-90
-250
-300
-650
VBE (sat)
Collector-Base Saturation Voltage
IC= -10mA, IB= -0.5mA
IC= -100mA, IB= -5mA
-700
-900
VBE (on)
Base-Emitter On Voltage
VCE= -5V, IC= -2mA
VCE= -5V, IC= -10mA
-600
fT
Current Gain Bandwidth Product
VCE= -5V, IC= -10mA, f=10MHz
Cob
Output Capacitance
Noise Figure
VCE= -5V, IC= -200µA
f=1KHz, RG=2KΩ
VCE= -5V, IC= -200µA
RG=2KΩ, f=30~15000MHz
800
-660
: BC556/557/558
: BC559/560
: BC559
: BC560
mV
mV
mV
mV
-750
-800
VCB= -10V, IE=0, f=1MHz
NF
Units
nA
150
mV
mV
MHz
6
2
1
1.2
1.2
pF
10
4
4
2
dB
dB
dB
dB
hFE Classification
Classification
A
B
C
hFE
110 ~ 220
200 ~ 450
420 ~ 800
©2002 Fairchild Semiconductor Corporation
Rev. A2, August 2002
