Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
BU208A
NPN SILICON PLANAR POWER TRANSISTOR
TO-3
Metal Can Package
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector Emitter Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current Continuous
Peak
Base Current Continuous
Peak (Negative)
Power Dissipation @ Tc=95ºC
Derate Above 95ºC
Operating and Storage Junction
SYMBOL
VCEO (sus)
VCES
VEBO
IC
ICM
IB
IBM
PD
VALUE
700
1500
5.0
5.0
7.5
4.0
3.5
12.5
0.625
UNITS
V
V
V
A
Tj, Tstg
- 65 to +115
ºC
Rth(j-c)
1.6
ºC/W
TL
275
ºC
A
W
W/ºC
Temperature Range
THERMAL RESISTANCE
Junction to Case
Maximum Lead Temperature for
Soldering Purpose 1/8" from Case for
5 Seconds
ELECTRICAL CHARACTERISTICS (TC=25ºC unless specified otherwise)
DESCRIPTION
Collector Emitter Sustaing Voltage
Collector Cut off Current
Emitter Base Voltage
DC Current Gain
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
Dynamic Characteristics
Current Gain Bandwidth Product
Output Capacitance
Switching Characteristics
Storage Time
Fall Time
Pulse test: PW=300µs; Duty Cycle<2%
µ
Continental Device India Limited
SYMBOL
VCEO (sus)*
ICES
VEBO
hFE*
VCE (sat) *
VBE (sat) *
TEST CONDITION
IC=100mA, L=25mH
VCE=Rated VCES, VBE=0
IE=10mA, IC=0
IE=100mA, IC=0
IC=4.5A, VCE=5V
IC=4.5A, IB=2A
IC=4.5A, IB=2A
fT
Cob
IC=0.1A, VCE=5V,f=1MHz
VCB=10V, IE=0, f=1MHz
4.0
125
MHz
pF
IC=4.5A, IB1=1.8A, LB=10µH
IC=4.5A, IB1=1.8A, LB=10µH
8.0
0.4
µs
µs
tS
tf
Data Sheet
MIN
700
Typ
MAX
1.0
5.0
UNITS
V
mA
V
7.0
2.25
1.0
1.5
V
V
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