BC847T
NPN General Purpose Transistor
FEATURES
• Ideally suited for automatic insertion
• For Switching and AF Amplifier Applications
MECHANICAL DATA
• Case: SOT-523 Plastic
• Case material: “Green” molding compound, UL
flammability classification 94V-0, (No Br. Sb. CI)
• Lead Free in RoHS 2002/95/EC Compliant
Maximum Ratings @ TA = 25℃
Characteristic
Symbol
Value
Unit
Collector-Base Voltage
VCBO
50
V
Collector-Emitter Voltage
VCEO
45
V
Emitter-Base Voltage
VEBO
6
V
Collector Current -Continuous
IC
100
mA
Collector Power Dissipation
PC
150
mW
Junction Temperature
TJ
150
℃
TSTG
-55~+150
℃
Storage Temperature Range
Electrical Characteristics @ TA = 25℃ unless otherwise specified
Characteristic
Test Condition
Symbol
Min.
Typ.
Max.
Unit
Collector-base breakdown voltage
IC=10µA,IE=0
VCBO
50
V
Collector-emitter breakdown voltage
IC=10mA,IB=0
VCEO
45
V
Emitter-base breakdown voltage
IE=1µA,IC=0
VEBO
6
V
Collector-base cut-off current
VCB=30V
ICBO
DC current gain
VCE=5V,IC=2mA
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter voltage
Transition frequency
AT
BT
CT
IC=10mA,IB=0.5mA
IC=100mA,IB=5mA
IC=10mA,IB=0.5mA
IC=100mA,IB=5mA
IC=2mA,VCE=5V
IC=10mA,VCE=5V
VCE=5V,IC=10mA,
f=100MHz
Collector output capacitance
VCE=5V,
f=1KHz,RS=2K
Bandwidth=200Hz
110
200
420
220
450
800
0.25
0.6
VCE(sat)
VBE(sat)
VBE
fT
VCB=10V,f=1MHz
Noise figure
hFE
15
580
0.7
0.9
660
nA
V
V
700
770
100
mV
MHz
Cob
BW
CW
4.5
pF
NF
10
4
dB
REV. 2, Jun-2012, KSNR06
