HN1C03FU
TOSHIBA Transistor Silicon Npn Epitaxial Type (PCT Process)
HN1C03FU
Unit: mm
For Muting and Switching Applications
Including two devices in US6 (ultra super mini type with 6 leads)
High emitter-base voltage: VEBO = 25V (min)
High reverse hFE: reverse hFE = 150 (typ.)(VCE =−2V, IC =−4mA)
Low on resistance: RON = 1Ω (typ.)(IB = 5mA)
Absolute Maximum Ratings (Ta = 25°C)
(Q1, Q2 Common)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
50
V
Collector-emitter voltage
VCEO
20
V
Emitter-base voltage
VEBO
25
V
Collector current
IC
300
mA
Base current
IB
60
mA
PC*
200
mW
Tj
150
°C
Tstg
−55 to 150
°C
Collector power dissipation
Junction temperature
Storage temperature range
Note:
JEDEC
―
JEITA
―
TOSHIBA
2-2J1A
Weight: 6.8 mg (typ.)
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
* Total rating
1
2010-09-27
