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CA3127E
CA3127 High Frequency NPN Transistor Array August 1996 Features Description • Gain Bandwidth Product (fT). . . . . . . . . . . . . . . . >1GHz The CA3127 consists of five general purpose silicon NPN transistors on a common monolithic substrate. Each of the completely isolated transistors exhibits low 1/f noise and a value of fT in excess of 1GHz, making the CA3127 useful from DC to 500MHz. Access is provided to each of the terminals for the individual transistors and a separate substrate connection has been provided for maximum application flexibility. The monolithic construction of the CA3127 provides close electrical and thermal matching of the five transistors. • Power Gain . . . . . . . . . . . . . . . . . 30dB (Typ) at 100MHz • Noise Figure . . . . . . . . . . . . . . . . 3.5dB (Typ) at 100MHz • Five Independent Transistors on a Common Substrate Applications • VHF Amplifiers Ordering Information • Multifunction Combinations - RF/Mixer/Oscillator • Sense Amplifiers PART NUMBER (BRAND) • Synchronous Detectors TEMP. RANGE (oC) PACKAGE PKG. NO. • VHF Mixers CA3127E -55 to 125 16 Ld PDIP E16.3 CA3127M (3127) -55 to 125 16 Ld SOIC M16.15 CA3127M96 (3127) -55 to 125 16 Ld SOIC Tape and Reel M16.15 • IF Converter • IF Amplifiers • Synthesizers • Cascade Amplifiers Pinout CA3127 (PDIP, SOIC) TOP VIEW 1 16 Q1 15 2 Q2 14 3 13 4 Q5 SUBSTRATE 5 12 11 6 Q3 Q4 7 10 8 9 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999 5-1 File Number 662.3
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