DATA SHEET
MOS INTEGRATED CIRCUIT
μPD43256B
256K-BIT CMOS STATIC RAM
32K-WORD BY 8-BIT
Description
The μPD43256B is a high speed, low power, and 262,144 bits (32,768 words by 8 bits) CMOS static RAM.
Battery backup is available. And A and B versions are wide voltage operations.
The μPD43256B is packed in 28-pin PLASTIC DIP, 28-pin PLASTIC SOP and 28-pin PLASTIC TSOP (I) (8 x 13.4 mm).
Features
• 32,768 words by 8 bits organization
• Fast access time: 70, 85, 100, 120 ns (MAX.)
• Low voltage operation (A version: VCC = 3.0 to 5.5 V, B version: VCC = 2.7 to 5.5 V)
• Low VCC data retention: 2.0 V (MIN.)
• /OE input for easy application
Part number
Access time
Operating supply Operating ambient
ns (MAX.)
Supply current
At operating
At standby
At data retention
°C
mA (MAX.)
μA (MAX.)
μA (MAX.) Note1
4.5 to 5.5
0 to 70
45
50
3
15
70, 85
temperature
V
μPD43256B-xxL
voltage
2
μPD43256B-xxLL
μPD43256B-Axx
μPD43256B-Bxx Note2
85, 100
Note2
, 120
100, 120
Note2
3.0 to 5.5
2.7 to 5.5
Notes 1. TA ≤ 40 °C, VCC = 3.0 V
2. Access time: 85 ns (MAX.) (VCC = 4.5 to 5.5 V)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. M10770EJFV0DS00 (15th edition)
Date Published November 2008
Printed in Japan
1990, 1993, 1994