CXK58257ATM/AYM -70L/10L
-70LL/10LL
32768-word x 8-bit High Speed CMOS Static RAM
Block Diagram
Description
CXK58257ATM/AYM is a 256K-bit, 32,768-word-by8-bit, CMOS static RAM.
It is suitable for portable and battery back-up systems
which require extremely small packages and low
stand-by current.
• Thin small-outline package:
CXK58257ATM:
8mm x 13.4mm, 28 pin TSOP
CXK58257AYM:
8mm x 13.4mm, 28 pin TSOP
(Mirror image pinout)
• Low stand-by current:
L-Version:
25µA (max.) @VCC = 5.5V, Ta = 0 to +70°C
LL-Version:
5µA (max.) @VCC = 5.5V, Ta = 0 to +70°C
• Low voltage data retention: 2.0V (min.)
• Fast access time:
(Access time)
CXK58257ATM/AYM-70L, -70LL
70ns (max.)
CXK58257ATM/AYM-10L, -10LL
100ns (max.)
• Single + 5V supply: 5V ± 10 %
Buffer
A10
A4
A3
A2
A1
A0
Features
A14
A13
A12
A11
A9
A8
A7
A6
A5
Buffer
Row
Decoder
VCC
Memory
Matrix
512x512
GND
I/O Gate
Column
Decoder
OE
Buffer
WE
CE
I/O Buffer
I/O1
I/O8
Function
32768-word-x-8-bit static RAM
Structure
Silicon gate CMOS IC
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or otherwise under any patents or other rights. Application circuits shown, if any, are typical examples illustrating the operation of the devices.
Sony cannot assume responsibility for any problems arising out of the use of these circuits.
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E9044A46-ST
