MP4104
TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type
(Four Darlington Power Transistors in One)
MP4104
Industrial Applications
High Power Switching Applications
Hammer Drive, Pulse Motor Drive and Inductive Load
Switching
•
Small package by full molding (SIP 10 pins)
•
High collector power dissipation (4-device operation)
•
High collector current: IC (DC) = 4 A (max)
•
Unit: mm
High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1.5 A)
: PT = 4 W (Ta = 25°C)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
120
V
Collector-emitter voltage
VCEO
100
V
Emitter-base voltage
VEBO
6
V
DC
IC
4
Pulse
ICP
6
IB
Collector power dissipation
(4-device operation)
Junction temperature
Storage temperature range
―
0.5
A
TOSHIBA
2.0
W
4.0
W
150
°C
Tstg
(1-device operation)
JEITA
PT
Collector power dissipation
A
PC
Continuous base current
―
Tj
Collector current
JEDEC
−55 to 150
°C
2-25A1A
Weight: 2.1 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Array Configuration
3
5
4
2
7
6
9
8
1
10
R1 R2
R1 ≈ 4.5 kΩ
R2 ≈ 300 Ω
1
2006-10-27
