PART OBSOLETE - EOL18
Bulletin U2788 rev. G 04/03
DF SERIES
1A Single Phase D.I.L. Rectifier Bridge
Features
• Glass passivated chips
• Leads on standard 0.1" grid
• Suitable for automatic insertion
• High surge current capability
• Fully characterised data
• Wide temperature range
• Surface mount option
• Lead free terminals solderable as per
MIL-STD-750 Method 2026
• High temperature soldering guaranteed 260°C/8-10 secs
• Polarity symbols marked on the case
• UL E160375 approved
IO(av) = 1.0 A
+
IO(av)
~
VRRM range
-
~
50 to 1000V
Description
The DF Series of Single Phase Rectifier Bridges
consists of four silicon junctions encapsulated in a 4
pin D.I.L. package. These devices are intended for
general use in industrial and consumer equipment.
Electrical Specification
DF...
IO
Units Conditions
1.0
A
Tamb = 40 oC, Resistive or inductive load
current
0.8
A
Tamb = 40oC, Capacitive load
Maximum peak one
30
A
t = 10ms, 20ms
Following any rated
cycle, non-repetitive
31
A
t = 8.3ms, 16.7ms
load condition and with
Maximum I2t capability
4.5
A2s
t = 10ms
4.1
6.4
A2s
A2s
Initial TJ = TJ max
for fusing
t = 8.3ms
t = 10ms
A2s
100% VRRM reapplied
Initial TJ = TJ max
5.8
IFSM
Maximum DC output
t = 8.3ms
no voltage reapplied
64
A2√s
t = 0.1 to 10ms, no voltage reapplied
1.0
V
surge current
I2t
I2√t
Maximum I2√t
rated VRRM reapplied
capability for fusing
VFM
Maximum peak forward
IFM = 1.0A, TJ = 25oC
voltage per diode
IRM
Typical peak reverse
leakage per diode
f
Operating frequency
5
µA
TJ = 25oC, 100% VRRM
100
µA
TJ = 150 oC, 100% VRRM
50 to 1000
Hz
50 to 1000
V
range
VRRM
Maximum repetitive peak
reverse voltage range
Thermal and Mechanical Specifications
DF...
TJ
Operating and storage
Tstg
Thermal resistance,
Units
Conditions
temperature range
RthJA
- 55 to 150
C
o
60
K/W
0.6 (0.02)
g (oz)
junctions to ambient
W
Approximate weight
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