FDD6680 / FDU6680
30V N-Channel PowerTrench® MOSFET
General Description
Features
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench process that
has been especially tailored to minimize the on state
resistance and yet maintain low gate charge for
superior switching performance.
• 46 A, 30 V
Applications
• Fast Switching Speed
• DC/DC converter
• High performance trench technology for extremely
low RDS(ON)
RDS(ON) = 10 mΩ @ VGS = 10 V
RDS(ON) = 15 mΩ @ VGS = 4.5 V
• Low gate charge
• Motor Drives
D
D
G
S
I-PAK
(TO-251AA)
D-PAK
TO-252
(TO-252)
G D S
Absolute Maximum Ratings
Symbol
G
S
TA=25oC unless otherwise noted
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
30
V
VGSS
Gate-Source Voltage
±20
V
ID
Continuous Drain Current @TC=25°C
(Note 3)
46
A
@TA=25°C
(Note 1a)
12
Pulsed
(Note 1a)
100
PD
Power Dissipation
@TC=25°C
(Note 3)
(Note 1a)
3.3
@TA=25°C
(Note 1b)
W
56
@TA=25°C
1.5
–55 to +175
°C
(Note 1)
2.7
°C/W
(Note 1a)
45
(Note 1b)
TJ, TSTG
96
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJC
Thermal Resistance, Junction-to-Case
RθJA
Thermal Resistance, Junction-to-Ambient
RθJA
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape width
Quantity
FDD6680
FDD6680
D-PAK (TO-252)
13’’
12mm
2500 units
FDU6680
FDU6680
I-PAK (TO-251)
Tube
N/A
75
©2004 Fairchild Semiconductor Corporation
FDD6680/FDU6680 Rev. C1(W)
FDD6680/FDU6680
November 2004
