IRFR9220, IRFU9220
Data Sheet
3.6A, 200V, 1.500 Ohm, P-Channel Power
MOSFETs
These are advanced power MOSFETs designed, tested, and
guaranteed to withstand a specific level of energy in the
avalanche breakdown mode of operation. These are
P-Channel enhancement-mode silicon gate power fieldeffect transistors designed for applications such as switching
regulators, switching converters, motor drivers, relay drivers,
and drivers for high-power bipolar switching transistors
requiring high speed and low gate-drive power. These types
can be operated directly from integrated circuits.
Formerly developmental type TA17502.
July 1999
4015.3
Features
• 3.6A, 200V
• rDS(ON) = 1.500Ω
• Temperature Compensating PSPICE® Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
Ordering Information
PART NUMBER
File Number
D
PACKAGE
BRAND
IRFR9220
TO-252AA
IF9220
IRFU9220
TO-251AA
IF9220
G
NOTE: When ordering use the entire part number. Add the suffix 9A
to obtain the TO-252AA variant in tape and reel, e.g., IRFR92209A.
S
Packaging
JEDEC TO-251AA
JEDEC TO-252AA
SOURCE
DRAIN
GATE
GATE
SOURCE
DRAIN (FLANGE)
DRAIN (FLANGE)
4-89
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
PSPICE® is a registered trademark of MicroSim Corporation.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
