HN1A01F
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
HN1A01F
Unit: mm
Audio-Frequency General-Purpose Amplifier
Applications
Small package (dual type)
High voltage and high current
: VCEO = −50 V, IC = −150 mA (max)
High hFE: hFE = 120~400
Excellent hFE linearity
: hFE (IC = −0.1 mA) / hFE (IC = −2 mA) = 0.95 (typ.)
Absolute Maximum Ratings (Ta = 25°C)
(Q1, Q2 Common)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
VCBO
−50
V
Collector-emitter voltage
VCEO
−50
V
Emitter-base voltage
VEBO
−5
V
Collector current
IC
−150
mA
Base current
IB
−30
mA
PC*
300
mW
Tj
125
°C
Tstg
−55~125
°C
Collector power dissipation
Junction temperature
Storage temperature range
JEDEC
―
JEITA
―
TOSHIBA
2-3N1A
Weight: 0.015 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
* Total rating
Electrical Characteristics (Ta = 25°C) (Q1, Q2 Common)
Symbol
Test
Circuit
Collector cut-off current
ICBO
―
Emitter cut-off current
IEBO
DC current gain
Collector-emitter saturation voltage
Characteristic
Transition frequency
Collector output capacitance
Test Condition
Min
Typ.
Max
Unit
VCB = −50 V, IE = 0
―
―
−0.1
μA
―
VEB = −5 V, IC = 0
―
―
−0.1
μA
hFE (note)
―
VCE = −6 V, IC = −2 mA
120
―
400
―
VCE (sat)
―
IC = −100 mA, IB = −10 mA
―
−0.1
−0.3
V
fT
―
VCE = −10 V, IC = −1 mA
80
―
―
MHz
Cob
―
VCB = −10 V, IE = 0,
f = 1 MHz
―
4
7
pF
Note: hFE Classification
Y (Y): 120~240, GR (G): 200~400
( ) Marking Symbol
1
2007-11-01
