HOME>在庫検索>在庫情報
EM6K1T2R
EM6K1 Transistor 2.5V Drive Nch+Nch MOS FET EM6K1 External dimensions (Unit : mm) Structure Silicon N-channel MOS FET EMT6 1.6 0.5 1.0 0.5 0.5 Features 1) Two 2SK3019 transistors in a single EMT package. 2) The MOS FET elements are independent, eliminating mutual interference. 3) Mounting cost and area can be cut in half. 4) Low on-resistance. 5) Low voltage drive (2.5V) makes this device ideal for portable equipment. (6) (5) (4) 1.6 1.2 1pin mark (1) (2) (3) 0.22 0.13 Each lead has same dimensions Abbreviated symbol : K1 Applications Interfacing, switching (30V, 100mA) Packaging specifications Package Equivalent circuit Code (5) T2R Basic ordering unit (pieces) Type (6) Taping 8000 Gate Protection Diode ∗ (4) Tr1 EM6K1 Tr2 (1) ∗ Gate Protection Diode (2) (3) (1)Tr1 (2)Tr1 (3)Tr2 (4)Tr2 (5)Tr2 (6)Tr1 Source Gate Drain Source Gate Drain ∗ A protection diode has been built in between the gate and the source to protect against static electricity when the product is in use. Use the protection circuit when rated voltages are exceeded. Absolute maximum ratings (Ta=25°C) Symbol Limits Unit Drain−source voltage VDSS 30 V Gate−source voltage VGSS ±20 V Continuous ID ±100 mA Pulsed IDP ∗1 ±400 mA ∗2 150 mW / TOTAL 120 mW / ELEMENT Parameter Drain current PD Total power dissipation Channel temperature Tch 150 °C Storage temperature Tstg −55 to +150 °C ∗1 Pw≤10µs, Duty cycle≤1% ∗2 With each pin mounted on the recommended lands. Rev.C 1/3
ROHM
ローム株式会社
日本
炭素皮膜抵抗の特許を元に創業した。社名のROHM(R:抵抗 Ohm:抵抗を示す単位)はそこに由来する。その後、大規模集積回路の製造を手がけ始め、現在は様々な機能を顧客の要望に応じてLSI上に集積するカスタムLSIが主力となっている。
お買い上げ小計が1万円以上の場合は送料はサービスさせて頂きます。1万円未満の場合、また時間指定便はお客様負担となります。(送料は地域により異なります。)