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部品型式

HY29LV160BT-90V

製品説明
仕様・特性

HY29LV160 16 Mbit (2M x 8/1M x 16) Low Voltage Flash Memory KEY FEATURES n Single Power Supply Operation n n n n n n n n n – Read, program and erase operations from 2.7 to 3.6 volts – Ideal for battery-powered applications High Performance – 70, 80, 90 and 120 ns access time versions Ultra-low Power Consumption (Typical Values At 5 Mhz) – Automatic sleep mode current: 1 µA – Standby mode current: 1 µA – Read current: 9 mA – Program/erase current: 20 mA Flexible Sector Architecture: – One 16 KB, two 8 KB, one 32 KB and thirty-one 64 KB sectors in byte mode – One 8 KW, two 4 KW, one 16 KW and thirty-one 32 KW sectors in word mode – Top or bottom boot block configurations available Sector Protection – Allows locking of a sector or sectors to prevent program or erase operations within that sector – Sectors lockable in-system or via programming equipment – Temporary Sector Unprotect allows changes in locked sectors (requires high voltage on RESET# pin) Fast Program and Erase Times – Sector erase time: 0.25 sec typical for each sector – Chip erase time: 8 sec typical – Byte program time: 9 µs typical Unlock Bypass Program Command – Reduces programming time when issuing multiple program command sequences Automatic Erase Algorithm Preprograms and Erases Any Combination of Sectors or the Entire Chip Erase Suspend/Erase Resume – Suspends an erase operation to allow reading data from, or programming data to, a sector that is not being erased – Erase Resume can then be invoked to complete suspended erasure Automatic Program Algorithm Writes and Verifies Data at Specified Addresses Preliminary Revision 1.1, July 2000 n 100,000 Write Cycles per Sector Minimum n Data# Polling and Toggle Bits n n n n n – Provide software confirmation of completion of program and erase operations Ready/Busy# Pin – Provides hardware confirmation of completion of program and erase operations Hardware Reset Pin (RESET#) Resets the Device to Reading Array Data Compliant With Common Flash Memory Interface (CFI) Specification – Flash device parameters stored directly on the device – Allows software driver to identify and use a variety of different current and future Flash products Compatible With JEDEC standards – Pinout and software compatible with single-power supply Flash devices – Superior inadvertent write protection Space Efficient Packaging – 48-pin TSOP and 48-ball FBGA packages LOGIC DIAGRAM 20 8 A[19:0] DQ[7:0] 7 CE# DQ[14:8] OE# DQ15/A-1 WE# RY/BY# RESET# BYTE#

ブランド

HYNIX

現況

2012年3月にSKハイニックスに社名変更した。

現ブランド

SKHYNIX

会社名

SK hynix Inc.

本社国名

韓国

事業概要

韓国内でサムスン電子に次いで2位の半導体メーカーである。 主力製品はDRAMとNAND型フラッシュメモリである。

供給状況

 
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