This product complies with the RoHS Directive (EU 2002/95/EC).
Schottky Barrier Diodes (SBD)
MA4SD05X
Silicon epitaxial planar type
For high-speed switching circuits
Unit: mm
1.6±0.05
1.0±0.05
1
2
Maximum peak reverse voltage
Non-repetitive peak forward surge current *1, 2
Junction temperature
Storage temperature
°C
–55 to +125
Tstg
A
125
Tj
mA
1
IFSM
mA
300
IFM
V
100
IF
Peak forward current *1
(0.225)
V
45
VRM
Forward current *1
Unit
45
VR
Rating
°C
Note) *1: Value for single diode
*2: 50 Hz sine wave 1 cycle (Non-repetitive peak current)
5°
(0.15)
Reverse voltage
0.10±0.03
0.01±0.01
Symbol
0.25±0.05
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Absolute Maximum Ratings Ta = 25°C
Parameter
0.55±0.1
3
M
Di ain
sc te
on na
tin nc
ue e/
d
4
5°
Two isolated elements are contained in one package, allowing high-density
mounting
Optimum for high frequency rectification because of its short reverse recovery
time trr
1.15±0.05
1.6±0.1
Features
1: Anode 1
2: Anode 2
3: Cathode 2
4: Cathode 1
SSMini4-F1 Package
Marking Symbol: M5C
Internal Connection
3
1
2
ue
4
on
tin
Electrical Characteristics Ta = 25°C±3°C
Symbol
ce
/D
isc
Parameter
Reverse current
Ma
Terminal capacitance
int
en
an
Forward voltage
Reverse recovery time *
VF1
VF2
VF3
IR
Ct
trr
Conditions
Min
Typ
IF = 1 mA
0.35
IF = 100 mA
0.54
Unit
0.27
IF = 10 mA
Max
VR = 40 V
V
0.60
5
VR = 0 V, f = 1 MHz
12
IF = IR = 100 mA, Irr = 10 mA
RL = 100 Ω
2.0
µA
18
pF
ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 250 MHz
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage
of current from the operating equipment.
3. *: trr measurement circuit
Publication date: December 2004
SKH00144AED
1
