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IMS2620P-12

製品説明
仕様・特性

TO-5 CASE RELAY SENSITIVE DPDT  Basic  Suppression  Suppression/Steering  Transistor Driven Series I MS Product Description A series of ultra miniature hermetically sealed relays constructed in a transistor style case, providing superior performance and established reliability characteristics. Available in a variety of sensitivities contact configurations and hybrid versions, to provide a most versatile element to the circuit designer. The following construction features ensure the highest reliability in extreme environments: All welded relay construction Cleaning and sealing techniques ensures maximum internal cleanliness Low level to 1 ampere switching 2 form C, DPDT contacts, special metal alloy with gold plating Frame design and force / mass ratio provides exceptional shock and vibration immunity Low intercontact capacitance and contact circuit losses, provides also a reliable switching functions in demanding RF applications, combined with small size and low coil power dissipation (see figure 1). Series Types - MIL-PRF-39016/11, 16 & 21 MIL-PRF-28776/3 (note 1) Basic Relay, 2 form C, DPDT Basic Relay combined with an internal diode for coil transient suppression IMS*DD Basic Relay incorporates two internal diodes for coil transient suppression and polarity reversal protection IMS*T Basic Relay incorporating an internal transistor driver and diode for coil transient suppression IMS* IMS*D Environmental and Physical Specifications Temperature (Ambient) Shock Vibration (sinusoidal) Vibration (random) Acceleration Sealing Weight - 65°C to + 125°C 75 g, 6 ms. 30 g, 10 to 3000 Hz 0,4 g² / Hz, 50 to 2000 Hz 50 g All welded, Hermetic 0,15 oz. (4,25 grams) max. Electrical Characteristics (over the Temperature range. Unless otherwise noted) Coil Data Contact Rating (Note: All ratings with grounded case) Contact Resistance Operate Time Release Time Contact Bounce Contact Stabilisation Time Dielectric Strength Insulation Resistance Intercontact Capacitance Sensitivity Diode P.I.V. Negative Coil Transient Transistor Characteristics at 25 °C (Series IMS*T) See Typical Characteristics chart Type Load Contact Load Cycles min. Low Level 1.000.000 10 to 50 A / 10 to 50 mV Resistive 100.000 1 A / 28 Vdc 100.000 250 mA / 115Vac, 60 and 400 Hz (Case not grounded) 100.000 100 mA / 115 Vac, 60 and 400 Hz Resistive overload 100 2 A / 28 Vdc Inductive 100.000 200 mA / 28 Vdc (320 mH) Lamp 100.000 100 mA / 28 Vdc 0,1  max. initial, 0,2  max. after life 4,0 ms. max. 2,0 ms. max. Series: IMS* 7,5 ms. max. Series: IMS*D, IMS*DD, IMS*T 1,5 ms. max. 2,0 ms. max. 500 Vrms min., 60 Hz, all points at sea level 125 Vrms min., 60 Hz, all points at 70.000 ft. 10.000 M min. all points at 500 Vdc 0,7 pF typical 60 mW at pick-up, 250 mW at nominal rated coil voltage, at 25 °C 100 Vdc min. Series: IMS*D, IMS*DD, IMS*T 1,0 Vdc max. Series: IMS*D, IMS*DD, IMS*T Emitter-Base Voltage (Vebo) 6,0 Vdc min. 70 Vdc min. Collector-Base Breakdown Voltage (Vcbo) (Ic = 10 A) Base Turn-Off Voltage 0,3 Vdc max. Figure 1 – Radio Frequency Curves Note: Radio frequency curves are typical characteristics based on factory knowledge. Tests to ensure compliance on RF performance, are not performed. 50 40 30 20 10 dB 1,3 1,0 0,8 0,6 0,4 0,2 1,2 VSWR B 1,1 A 0,01 High Generation S.r.l. Tel: + 39 06 96873136 Fax: + 39 06 94443060 A – Insertion loss B – Return loss (VSWR) C – Isolation across contacts C 0,05 0,01 3 0,5 1,0 0 2,0 FREQUENCY (GHz) REV. 0/2012

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INMS

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