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IRF9533
IRF9533 Transistors P-Channel Enhancement MOSFET Military/High-RelN V(BR)DSS (V)60 V(BR)GSS (V)20 I(D) Max. (A)10# I(DM) Max. (A) Pulsed I(D)6.5# @Temp (øC)100 IDM Max (@25øC Amb)40# @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)75# Minimum Operating Temp (øC)-55õ Maximum Operating Temp (øC)150õ Thermal Resistance Junc-Case1.67 Thermal Resistance Junc-Amb.80 V(GS)th Max. (V)4 V(GS)th (V) (Min)2 @(VDS) (V) (Test Condition) @I(D) (A) (Test Condition)250u I(DSS) Max. (A)1m @V(DS) (V) (Test Condition)48 @Temp (øC) (Test Condition)125 I(GSS) Max. (A)500n
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