IRFD9120
Data Sheet
July 1999
1.0A, 100V, 0.6 Ohm, P-Channel Power
MOSFET
2285.3
Features
• 1.0A, 100V
This advanced power MOSFET is designed, tested, and
guaranteed to withstand a specified level of energy in the
breakdown avalanche mode of operation. These are
P-Channel enhancement mode silicon gate power field
effect transistors designed for applications such as switching
regulators, switching convertors, motor drivers, relay drivers
and drivers for high power bipolar switching transistors
requiring high speed and low gate drive power. These types
can be operated directly from integrated circuits.
• rDS(ON) = 0.6Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
Symbol
Formerly developmental type TA17501.
D
Ordering Information
PART NUMBER
File Number
PACKAGE
BRAND
G
IRFD9120
HEXDIP
IRFD9120
NOTE: When ordering, use the entire part number.
S
Packaging
HEXDIP
DRAIN
GATE
SOURCE
4-45
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
