IRFW720B / IRFI720B
400V N-Channel MOSFET
General Description
Features
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supplies and
electronic lamp ballasts based on half bridge.
•
•
•
•
•
•
3.3A, 400V, RDS(on) = 1.75Ω @VGS = 10 V
Low gate charge ( typical 14 nC)
Low Crss ( typical 11 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
D
!
D
●
◀
G!
G
S
D2-PAK
G D S
IRFW Series
Absolute Maximum Ratings
Symbol
VDSS
ID
I2-PAK
!
IRFI Series
S
TC = 25°C unless otherwise noted
Parameter
Drain-Source Voltage
- Continuous (TC = 25°C)
Drain Current
IRFW720B / IRFI720B
400
Units
V
3.3
A
- Continuous (TC = 100°C)
IDM
Drain Current
▲
●
●
- Pulsed
2.1
A
13.2
(Note 1)
A
VGSS
Gate-Source Voltage
± 30
V
EAS
Single Pulsed Avalanche Energy
(Note 2)
240
mJ
IAR
Avalanche Current
(Note 1)
3.3
A
EAR
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (TA = 25°C) *
(Note 1)
4.9
5.5
3.13
mJ
V/ns
W
49
0.39
-55 to +150
W
W/°C
°C
300
°C
dv/dt
PD
TJ, Tstg
TL
(Note 3)
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Characteristics
Symbol
RθJC
Parameter
Thermal Resistance, Junction-to-Case
Typ
--
Max
2.57
Units
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient *
--
40
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
--
62.5
°C/W
* When mounted on the minimum pad size recommended (PCB Mount)
©2001 Fairchild Semiconductor Corporation
Rev. B, November 2001
IRFW720B / IRFI720B
November 2001
