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RB481YT2R
Data Sheet Schottky Barrier Diode RB481Y-90 Applications Low current rectification Dimensions (Unit : mm) Land size figure (Unit : mm) 0.5 0.22±0.05 (3) 1.2±0.1 (4) 1.55 0.13±0.05 Construction Silicon epitaxial planar (1) 0.5 1.6±0.1 1.6±0.05 Features 1) Ultra small mold type. (EMD4) 2) Low VF 3) High reliability 0.45 1.6±0.05 1.6±0.1 1.0 0~0.1 EMD4 (2) Structure 0.5 1.0±0.1 0.5±0.05 ROHM : EMD4 JEITA : SC-75A Size dot (year week factory) Taping specifications (Unit : mm) φ1.5±0.1 0 2.0±0.05 0.3±0.1 1PIN Absolute maximum ratings (Ta=25°C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current (*1) Forward current surge peak (60Hz・1cyc) (*1) Junction temperature Storage temperature φ0.8±0.1 4.0±0.1 8.0±0.2 1.65±0.01 0~0.1 1.65±0.1 1.65±0.1 1.7±0.05 5.5±0.2 3.5±0.05 1.75±0.1 4.0±0.1 0.65±0.1 Limits 90 90 100 1 125 40 to 125 Symbol VRM VR Io IFSM Tj Tstg Unit V V mA A °C °C (*1) Rating of per diode Electrical characteristics (Ta=25°C) Parameter Forward voltage Reverse current www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Conditions Symbol VF Min. Typ. Max. - 0.55 0.61 V IF=100mA IR - 20 100 μA VR=90V 1/3 Unit 2011.05 - Rev.C
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